Ag/Ai schottky contacts on n-InP

Dunn, J.; Stringfellow, G. B.

doi:10.1007/bf02652149

Cited by 17 publications

(3 citation statements)

References 16 publications

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“…[6 -14] Dunn et al [6] fabricated the Ag/Al/InP structure and obtained an effective barrier height of 0.4 eV for the as-deposited sample. They found that the barrier height increased as much as 0.26 eV resulting in beff ≈ 0.65 eV by annealing at temperatures between 400 and 500…”

Section: Introductionmentioning

confidence: 99%

Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts

Janardhanam¹,

Kumar²,

Reddy³

et al. 2009

Surface & Interface Analysis

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Section: Introductionmentioning

confidence: 99%

Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts

Janardhanam¹,

Kumar²,

Reddy³

et al. 2009

Surface & Interface Analysis

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“…Many researcher proposed some method to improve the electrical characteristic, they including PH3 plasma treatments, [9] growing a thin P3N5 film, [10] a POXNyHZ film,[11] a InSb film, [12] an interfacial oxide layer, [13][14][15][16] low temperature deposition techniques [ 17]or stacked metal structure Ag/Al [18], Pt/Al [19,20], and Ni/Ai/Ni [21] . All the reports showed higher effective barrier height than that of conventional single metal/n-InP diode.…”

Section: Introductionmentioning

confidence: 99%

Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

Huang

Cai

2006

2006 International Workshop on Junction Technology

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A double metals structure, Pt/Al/n-InP diode was studied. An A1203 thin film was formed at the contact interface of the Pt/Al/InP diode after thermal annealing. It was detected at the diffraction angle of 20=20.4' by X-ray diffraction (XRD) analysis after the diode was annealed at 300°C or 400°C for 10 min. Also, from secondary ion mass spectrum (SIMS) analysis, it was found that the A1203 thin film located at the contact interface of the Pt/Al/n-InP diode. The electrical characteristic was improved due to the formation of aluminum-oxide. The effective barrier height is equal to 0.74 eV which was measured on the annealed sample.

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“…Shi and Anderson 8 applied a low-temperature ͑77 K͒ deposition method for metals/n-InP contacts providing an ultrahigh barrier of 0.96 eV. Larger barriers were also achieved in the case of Ag/Al/n-InP ͑0.65 eV͒ 9 and Pt/Al/n-InP ͑0.74 eV͒ 10 structures.…”

Section: Introductionmentioning

confidence: 99%

Structural analysis of annealed Al/n-InP(100) interfaces: Different types of indium heteroepitaxial growth on InP(111)A and InP(111)B planes

Kečkéš

Ortner

Jakabovič

et al. 1998

Journal of Applied Physics

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Al/n-InP(100) structures, prepared as Schottky contacts, are provided by Al thermal evaporation at 28°C and subsequent annealing in the range of 200-750°C for 3 min. Annealing at temperatures above 500°C causes the formation of metallic indium at the interfaces. The orientation relationship between In and the substrate is revealed by x-ray diffraction texture analysis. For samples annealed below the melting point of Al (660.1°C), an epitaxy is formed with In͑101͒ ʈ InP͑111͒A and In͓010͔ ʈ InP͓110͔. For samples annealed at temperatures above the melting point of Al, the same epitaxy occurs besides two further epitaxies of indium growing on InP͑111͒B planes. Their orientation relationships are In͑001͒ ʈ InP͑111͒B and In͓010͔ ʈ InP͓110͔ and, for the second type, In͑110͒ ʈ InP͑111͒B and In͓113͔ ʈ InP͓110͔.

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Ag/Ai schottky contacts on n-InP

Cited by 17 publications

References 16 publications

Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts

Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts

Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

Structural analysis of annealed Al/n-InP(100) interfaces: Different types of indium heteroepitaxial growth on InP(111)A and InP(111)B planes

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