Structural analysis of annealed Al/n-InP(100) interfaces: Different types of indium heteroepitaxial growth on InP(111)A and InP(111)B planes

Abstract

Al/n-InP(100) structures, prepared as Schottky contacts, are provided by Al thermal evaporation at 28°C and subsequent annealing in the range of 200-750°C for 3 min. Annealing at temperatures above 500°C causes the formation of metallic indium at the interfaces. The orientation relationship between In and the substrate is revealed by x-ray diffraction texture analysis. For samples annealed below the melting point of Al (660.1°C), an epitaxy is formed with In͑101͒ ʈ InP͑111͒A and In͓010͔ ʈ InP͓110͔. For samples annealed at temperatures above the melting point of Al, the same epitaxy occurs besides two further epitaxies of indium growing on InP͑111͒B planes. Their orientation relationships are In͑001͒ ʈ InP͑111͒B and In͓010͔ ʈ InP͓110͔ and, for the second type, In͑110͒ ʈ InP͑111͒B and In͓113͔ ʈ InP͓110͔.