Advances in MoS2-Based Field Effect Transistors (FETs)

Abstract

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS2 is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS2-based FETs are presented. Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS2-based FETs, which is crucial for developing electronic and optoelectronic devices.

First Principles Study of Molybdenum Disulfide Electronic Structure

“…This unique properties of MoS 2 gives possibility on MoS 2 implementation on energy devices. Band gap with range 1-2 eV is suitable for application on semiconductor energy devices such as solar cell [11] and FET [10]. Also monolayer direct bandgap properties can lead into photoluminescence devices.…”

“…This value of band gap allow MoS 2 to be applied in semiconductor based devices, including any energy devices. Several study show MoS 2 application in solar cell [11], FET [10], and photoluminescence devices.…”

Synthesis of flower-like MoS2 nanosheets microspheres by hydrothermal method

“…There are a lot of useful properties of MoS 2 such as anisotropy, chemically inert, lubricity, catalyst and so on. Due to its unique properties, MoS 2 has been extensively researched in different field, such as lubricants [1], transistors [2], photoelectric device [3,4], solid-state secondary lithium battery cathodes [5] and industrial catalysts [6] and so on. Nowadays, various synthetic methods were reported to prepare MoS 2 , such as chemical vapor deposition [7], electrostatic spinning [8], template method [9] and hydrothermal method [10] etc.…”

Recent Trends in Field-Effect Transistors-Based Immunosensors

“…The 2D layered material molybdenum disulfide (MoS2) belongs to the class of transition metal dichalcogenides and features unique optical and electronic properties that have triggered great interest in the application of FET-based sensors [115]. The layers are held together by weak van der Waals forces and a pristine MoS2 monolayer presents only ~0.65 nm thick [116].…”