Advances in MCM packaging for microprocessors

Benson, Dewey; Hodges, C.R.; Huey, K.; Kim, P.; Logan, E.A.; Drobac, S.

doi:10.1109/ectc.1996.517385

Cited by 6 publications

(4 citation statements)

References 5 publications

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“…Generally, there are three types of MCM packaging technologies. The deposited dielectric MCM (MCM-D) is more expensive than either ceramic MCM (MCM-C) or laminated MCM (MCM-L) [1]. Although MCM-D is more expensive per unit area, it can cost less if it offers enough savings in area, yield at speed or assembly yield.…”

Section: Introductionmentioning

confidence: 99%

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Geng

Ding

et al. 2009

J. Micromech. Microeng.

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A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 • C W −1 . The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S 21 ) is below 0.4 dB from 0 to 40 GHz and the return loss (S 11 ) is less than −20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S 21 shifting caused by the packaging structure is below 0.5 dB, and S 11 is less than −10 dB from 8 GHz to 14 GHz.

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Section: Introductionmentioning

confidence: 99%

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Geng

Ding

et al. 2009

J. Micromech. Microeng.

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“…Copper is the conductor of choice, but aluminum has been reported. Thin-film wiring on silicon substrates is marketed by companies such as nChip [51] or AT&T, in which case the carrier performs support or some limited functionally, such as maybe decoupling capacitance or additional power planes. The silicon substrate can be used to incorporate active driver circuits and offload some of the chip power burden.…”

Section: Thin-film Wiringmentioning

confidence: 99%

“…These planes provide a low effective inductive path to the decoupling capacitors placed around the chips. Structures have been built with integrated capacitors using high dielectric thin-film materials [51]. The performance limitation in the case of thin-film wiring is only the ability to contain all the noise sources within the allowed receiver circuit noise budget.…”

Section: Thin-film Wiringmentioning

confidence: 99%

Electrical characteristics of interconnections for high-performance systems

Deutsch

1998

Proc. IEEE

150

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A review is presented of the electrical characteristics of highdensity, high-performance interconnections used in digital and communication applications. These interconnections behave as lossy transmission lines for the frequency range of interest. A brief theoretical explanation of the key properties of lossy, coupled transmission lines is given. A new short-pulse propagation technique used for characterizing a large category of wiring is described. A detailed description is made of each of the major interconnect types encountered, namely, shielded cables, printed circuit boards, ceramic carriers, thin-film wiring, and on-chip wiring. Representative examples are given in each case to highlight the key performance-limiting parameters. The modeling and measurement techniques used are explained and examples are given. Future technological directions and their effect on performance are discussed.

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“…This width and space have adequate for this technology. [3] the differential of bus line length was kept shorter than 5 mm. Asynchronous signal lines were isolated from other signal lines by earth-grounded signal lines as…”

Section: Design and Technologiesmentioning

confidence: 99%

Advanced ATM-layer function MCM-D module for ATM wide-area network

Kawamura

Yamanaka

Kaizu

1997 Proceedings 47th Electronic Components and Technology Conference

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This paper describes a high-performance and costeffective MCM-D module for an ATM-layer function device. The MCM-D module is fabricated on a Sisubstrate using the stacking RAM technique to reduce module size. The MCM has a 4-layer Si substrate, a high-performance ASIC, 8 high-speed S U M S , and an FPGA. By using the stacking RAM technique, MCM-D module size was reduced to 50.8 mm x 50.8 mm.This is 40 % of that (100 mm x 65 mm) of a doubleside mounted sub-board module with conventional packaging(QFP and SOP). The MCM-D module realizes be very small with very large-capacity and high-speed memory.A high-performance and cost-effective ATM-layer function MCM-D module was fabricated. The MCM-

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Advances in MCM packaging for microprocessors

Cited by 6 publications

References 5 publications

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Electrical characteristics of interconnections for high-performance systems

Advanced ATM-layer function MCM-D module for ATM wide-area network

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