2011 International Electron Devices Meeting 2011
DOI: 10.1109/iedm.2011.6131506
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Advances, challenges and opportunities in 3D CMOS sequential integration

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Cited by 108 publications
(47 citation statements)
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“…Such a minimization is mandatory in monolithic 3D integration (CoolCube™ [27]), i.e. the stacking of extrathin-silicon-on-insulator (ET-SOI) FETs one upon another thanks to a sequential integration scheme, as described in [4].…”
Section: Introductionmentioning
confidence: 99%
“…Such a minimization is mandatory in monolithic 3D integration (CoolCube™ [27]), i.e. the stacking of extrathin-silicon-on-insulator (ET-SOI) FETs one upon another thanks to a sequential integration scheme, as described in [4].…”
Section: Introductionmentioning
confidence: 99%
“…18). However, the impact of F does not affect mainly the electrical properties [9], as compared to the W implanted in Si substrate.…”
Section: Silicide Stability Improvementmentioning
confidence: 97%
“…TPAD can be used in conjunction with (or without) split-manufacturing [17]. TPAD can be combined with emerging non-volatile memories (e.g., Resistive RAM or RRAM) and their monolithic 3D integration [18] to reduce hardware overheads. 6.…”
Section: Index Termsmentioning
confidence: 99%