Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

Aubin, J.; Hartmann, Jean‐Michel; Benevent, V.

doi:10.1016/j.tsf.2015.07.024

Cited by 17 publications

(13 citation statements)

References 24 publications

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“…However, two different activation energies E A are apparent. Below 475 °C, the observed activation energy is 2.0 eV which is similar to the measured hydrogen desorption activation energies (2-2.5 eV) [17][18][19] as well as the Si growth activation energy values obtained using Si 2 H 6 precursor in other reduced pressure CVD tools (2-2.7 eV), 20,21 and ultra-high vacuum CVD (2-2.1 eV) 22 and therefore indicates a hydrogen desorption limited regime. At higher temperatures (T ⩾ 475 °C) when hydrogen surface coverage is lower, the apparent activation energy is reduced to 1.3 eV suggesting that hydrogen desorption is not the rate limiting step.…”

Section: Resultssupporting

confidence: 84%

Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer

Žurauskaitė¹,

Hellström

Östling

2020

ECS J. Solid State Sci. Technol.

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In this work we study the epitaxial Si growth with Si2H6 for Ge surface passivation in CMOS devices. The Si-caps are grown on Ge in the hydrogen desorption limited regime at a nominal temperature of 400 °C. We evaluate the process window for the interface state density and show that there is an optimal Si-cap thickness between 8 and 9 monolayers for Dit < 5·1011 cm−2 eV−1. Moreover, we discuss the strong impact of the Si-cap growth time and temperature on the interface state density, which arises from the Si thickness dependence on these growth parameters. Furthermore, we successfully transfer a TmSiO/Tm2O3/HfO2 gate stack process from Si to Ge devices with optimized Si-cap, yielding interface state density of 3·1011 eV−1 cm−2 and a significant improvement in oxide trap density compared to GeOx passivation.

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Section: Resultssupporting

confidence: 84%

Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer

Žurauskaitė¹,

Hellström

Östling

2020

ECS J. Solid State Sci. Technol.

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“…Similar islands were seen on the surface of Si (and SiGe) layers grown at low temperatures with Si2H6 [21], Si3H8 [22] and other high order Si precursors [23]. Reducing the Si precursor flow (and thus the growth rate) and switching to higher growth temperatures then helped in minimizing the island density or suppressing them, in line with Fig.…”

Section: -Gesi Surface Morphologysupporting

confidence: 76%

Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane

Hartmann

2020

Journal of Crystal Growth

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“…This retroactively explain why layers were seen as smooth in XRR and high crystalline quality in XRD: 0.05 % only of the surfaces was on average covered by islands. Small islands were also present on the surface of Si and SiGe layers grown at temperatures inferior or equal to 500 °C with trisilane (25) or Si2H6 + GeH4 (9). The use of high order silanes for the 550 °C deposition of Si layers otherwise resulted in islanded surfaces (25).…”

Section: -4 -Surface Morphologymentioning

confidence: 99%

“…However, the temperature is usually in the 600 °C -650 °C range, which precludes monolithic 3D integration. Switching to disilane (Si2H6), a Si precursor that decomposes at much lower temperatures than SiH2Cl2 ( 7)- (9), enabled us to selectively grow SiGe(:B) layers at temperatures as low as 500 °C (thanks to the use of Cyclic Deposition/Etch (CDE) strategies ( 10)- (11)). One could however wonder whether digermane (Ge2H6), a gaseous precursor with a Ge-Ge bond which is weaker and thus easier to break than the Ge-H one, might be appropriate for the low temperature growth of SiGe(:B).…”

Section: -Introductionmentioning

confidence: 99%

A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe

2016

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We have benchmarked germane and digermane for the low temperature growth of SiGe and SiGe:B (with disilane as the Si gaseous precursor). At 500°C, 20 Torr, the SiGe growth rate increased linearly with the Ge flow. It was 8 to 10 times higher with Ge2H6 than with GeH4, however. Ge atoms were otherwise 4 times more likely to incorporate in SiGe films with Ge2H6 than with GeH4. The use of GeH4 led to an exponential increase of the 20 Torr SiGe growth rate with temperature (42 kcal. mol.-1 activation energy), together with a slight linear decrease of x. The situation was different with Ge2H6. As T increased, we had a slight exponential increase of the SiGe growth rate (Ea = 15 kcal. mol.-1) and a huge linear decrease of the Ge content. Adding HCl to Si2H6 + Ge2H6 otherwise led at 500 °C, 20 Torr to a significant decrease of the growth rate, together with a significant Ge concentration increase. Finally, we have investigated the 500°C, 20 Torr growth of SiGe:B layers (with a Si2H6 + Ge2H6 + B2H6 chemistry). A marked increase of the SiGe:B growth rate with the B2H6 flow was observed, together with a less than linear decrease of the Ge concentration. The lowest resistivity, e.g. 4.3x10-4 Ω.cm, was obtained for F(B2H6)/F(H2) = 2.5x10-6. For higher B2H6 flows, we had a resistivity re-increase, which was likely due to the crystalline quality degradation then the transformation into poly-SiGe:B evidenced in X-Ray Diffraction.

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Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

Cited by 17 publications

References 24 publications

Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer

Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer

Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane

A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe

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