Advancement of microelectronics-grade carbon nanotube materials for NRAM&lt;sup&gt;&amp;#x00AE;&lt;/sup&gt; device manufacture

Lamb, James E.; Gibbons, Stephen; Jiang, Yongqing; Mangelson, Kay; Kremer, Kathryn.; Janzen, Daniel C.; Bledsoe, John; Boeser, Mathew

doi:10.1109/asmc.2014.6847008

Cited by 3 publications

(5 citation statements)

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“…Researchers have made significant contributions to enhancing comparison metrics within their respective levels of abstraction [1], [2], [4], [6]- [11], [13], [14], [24], [25]. However, it is crucial to note that the current architectural perspective findings are derived from a behavioral model of the circuit, which may not offer precise and detailed outcomes comparable to those from a real computing system.…”

Section: A Need For Stt-ram Based System Evaluation Frameworkmentioning

confidence: 99%

“…It is worth noting that the listed suppliers are not exclusive options, as alternative providers may also offer each type of memory technology. Considering the decreasing technology node size over time due to Denard's law, it is important to note that the suggested compatibility in the table is based on the findings from the literature review of [1]- [4], [6]- [18]. Therefore, it is plausible that each memory technology could potentially be fabricated with other CMOS sizes.…”

Section: Introductionmentioning

confidence: 99%

“…To overcome these issues, different approaches have been explored at various levels of abstraction, including circuit-level approaches [21]- [25], architecture-level approaches [10], [26], [27], and methods proposed from an application perspective [28], [29]. TABLE 1: Comprehensive comparison of NVM technologies [1]- [4], [6]- [18] STT…”

Section: Introductionmentioning

confidence: 99%

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EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

et al. 2022

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Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaption is the high write energy and latency. In this paper, we overcome this challenge by exploiting the stochastic switching of STT-RAM cells and, in tandem, with circuit-level approximation. We enforce the robustness of our technique by analyzing the vulnerability of write operation against radiation-induced soft errors and applying a low-cost improvement. Due to serious reliability challenges in nanometer-scale technology, the robustness of the proposed circuit is also analyzed in the presence of CMOS and magnetic tunnel junction (MTJ) process variation. Compared to the state-of-the-art, we achieve 33.04% and 5.47% lower STT-RAM write energy and latency, respectively, with a 3.7% area overhead, for memory-centric applications.

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Section: A Need For Stt-ram Based System Evaluation Frameworkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

et al. 2022

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“…There may be a perception that these raw CNT materials are hard to control, in part due to the materials properties depending on the CNT manufacturing details (e.g., catalyst variations, reactor design and conditions, etc), and these all impact fundamentally different approaches to refining a final CNT product. The CNT refinement process used for NRAM was to develop a CNT based formulation, which may be spun onto a substrate, much like a photo resist [10,11]. However, CNT formulations differ from photo resist and other sacrificial materials in that they remain on the substrate and are used as a primary functioning component of the intended device.…”

Section: What Is Nram ®mentioning

confidence: 99%

NRAM: a disruptive carbon-nanotube resistance-change memory

Gilmer¹,

Rueckes²,

Cleveland³

2018

Nanotechnology

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Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

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“…STT-RAM boasts several compelling features including nonvolatility, high density, soft error reliability, CMOS compatibility, high endurance, and scalability [1]- [4]. According to the International Roadmap for Devices and Systems (IRDS) [5], STT-RAM emerges as the most promising memory option to replace conventional memory technologies.…”

Section: Introductionmentioning

confidence: 99%

HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis

Seyedfaraji,

Bichl,

Aftab

et al. 2024

IEEE Access

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Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be evaluated before deployment under real workloads and architecture. But there is a lack of available open-source STT-RAM-based system evaluation framework, which hampers research and experimentation and impacts the adoption of STT-RAM in a system. This paper proposes a novel, extendable STT-RAM memory controller design integrated inside the gem5 simulator. Our framework enables understanding various aspects of STT-RAM, i.e., power, delay, clock cycles, energy, and system throughput. We will open-source our HOPE framework, which will fuel research and aid in accelerating the development of future system architectures based on STT-RAM. It will also facilitate the user for further tool enhancement.

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Advancement of microelectronics-grade carbon nanotube materials for NRAM<sup>®</sup> device manufacture

Cited by 3 publications

References 4 publications

EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

NRAM: a disruptive carbon-nanotube resistance-change memory

HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis

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