Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaption is the high write energy and latency. In this paper, we overcome this challenge by exploiting the stochastic switching of STT-RAM cells and, in tandem, with circuit-level approximation. We enforce the robustness of our technique by analyzing the vulnerability of write operation against radiation-induced soft errors and applying a low-cost improvement. Due to serious reliability challenges in nanometer-scale technology, the robustness of the proposed circuit is also analyzed in the presence of CMOS and magnetic tunnel junction (MTJ) process variation. Compared to the state-of-the-art, we achieve 33.04% and 5.47% lower STT-RAM write energy and latency, respectively, with a 3.7% area overhead, for memory-centric applications.
This paper presents a novel circuit (AID) to improve the accuracy of an energy-efficient in-memory multiplier using a standard 6T-SRAM. The state-of-the-art discharge-based in-SRAM multiplication accelerators suffer from a non-linear behavior in their bit-line (BL, BLB) due to the quadratic nature of the access transistor that leads to a poor signal-to-noise ratio (SNR). In order to achieve linearity in the BLB voltage, we propose a novel root function technique on the access transistor's gate that results in accuracy improvement of on average 10.77 dB SNR compared to state-of-the-art discharge-based topologies. Our analytical methods and a circuit simulation in a 65 nm CMOS technology verify that the proposed technique consumes 0.523 pJ per computation (multiplication, accumulation, and preset) from a power supply of 1V, which is 51.18% lower compared to other state-of-the-art techniques. We have performed an extensive Monte Carlo based simulation for a 4x4 multiplication operation, and our novel technique presents less than 0.086 standard deviations for the worst-case incorrect output scenario.
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