Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

Limmer, W.; Daeubler, J.; Dreher, Lukas; Glunk, M.; Schoch, W.; Schwaiger, Stephan; Sauer, R.

doi:10.1103/physrevb.77.205210

Cited by 50 publications

(52 citation statements)

References 40 publications

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“…IV͒. This analysis is our main result together with the detailed explanation of the AMR sign in ͑Ga,Mn͒As ͑resistance parallel to magnetization is smaller than perpendicular to magnetization͒ which is observed experimentally 8,9,[12][13][14][15][16][17][18] and is opposite to most magnetic metals. 19,20 The results in Sec.…”

Section: Introductionmentioning

confidence: 52%

“…3 Diluted magnetic semiconductors, and ͑Ga,Mn͒As in particular, offer a promising system in which these issues become simplified: 7 Fermi level lies close to the top of the valence band so that k · p approximation can be used, few bands are involved in transport, and in addition, their SOI is strong. Moreover, experiments done so far show that the noncrystalline component of the AMR, 8,9 arising from the breaking of the symmetry by choosing a specific current direction, outweighs the crystalline components in most of the metallic highly Mn-doped materials. In attempting to describe the AMR in such system, we can begin with a model isotropic but still spin-orbit coupled band structure and add the effect of magnetization in the three possible distinct ways, as sketched in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

et al. 2009

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Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance ͑AMR͒ in ͑Ga,Mn͒As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR ͑resistivity parallel to magnetization is smaller than perpendicular to magnetization͒ and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization.

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Section: Introductionmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 99%

Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

et al. 2009

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“…The increase of ρ yx and ρ xx below ∼1 T stems from the anisotropic magnetoresistance. 22 The Hall resistivity of sample A shown in Fig. 2(a) is dominated by the large negative MR, which can be attributed to the suppression of weak localization effects in the presence of a magnetic field B.…”

Section: Resultsmentioning

confidence: 99%

“…Further experimental details concerning the sample growth can be found in Refs. 22,23,24. The samples with high conductivities σ xx >180 Ω −1 cm −1 were obtained by postgrowth annealing for 1 h at 250 • C in air.…”

Section: Methodsmentioning

confidence: 99%

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

et al. 2009

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We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-to the high-conductivity regime. The anomalous Hall conductivity σ (AH) xy is extracted from the measured longitudinal and Hall resistivities. A transition from σ (AH) xy = 20 Ω −1 cm −1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σ (AH) xy ∝ σ 1.6 xx for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

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“…Now we turn to (113)-oriented layers. According to our previous work, 18 we are referring to the right-handed coordinate system (j, t, n), where j…”

Section: Anisotropic Magnetoresistancementioning

confidence: 99%

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

et al. 2010

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Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and orthorhombic crystal symmetry, phenomenologically describing the magnetic anisotropy and anisotropic magnetoresistance by appropriate anisotropy and resistivity parameters, respectively. Applying the results to (113)A orientation with monoclinic crystal symmetry, the expressions are used to determine the strain tensor and the shear angle of a series of (113)A-oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and to probe the magnetic anisotropy and anisotropic magnetoresistance at 4.2 K by means of angle-dependent magnetotransport. Whereas the transverse resistivity parameters are nearly unaffected by the magnetic field, the parameters describing the longitudinal resistivity are strongly field dependent.

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Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

Cited by 50 publications

References 40 publications

Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

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