Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Fox, A.; Heinemann, B.; Rücker, H.; Barth, R.; Fischer, G.; Wipf, Christian; Marschmeyer, S.; Aufinger, Klaus; Böck, J.; Boguth, S.; Knapp, H.; Lachner, Rudolf; Liebl, W.; Manger, D.; Meister, T.F.; Pribil, Andreas B.; Wursthorn, Jonas

doi:10.1109/led.2015.2432130

Cited by 33 publications

(22 citation statements)

References 12 publications

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“…5(a) for W E = 0.16 μm; for the reference transistor (L E = 5.69 μm), it is found that R Bi = 6.79 (24), 6.68 (25), and 6.76 (26); as a result, R Bx amounts to about 36 and is quite higher than R Bi .…”

Section: Impact Ionizationmentioning

confidence: 94%

“…This is the case for state-of-the-art SiGe:C HBTs, where the thermal resistances R TH have been pushed into the thousands of K/W [27], [29]- [31], and the openemitter breakdown voltage BV CBO has decreased down to 5-6 V and below [23], [24], [26], [27].…”

Section: B Proposed Improvementmentioning

confidence: 99%

“…It must be noted that devices belonging to set #2 with L E = 2.69 μm (9.89 μm) and to set #3 with L E = 2.73 μm (9.93 μm) share the same mask length of 2.8 μm (10 μm). architecture under test, the dominant role is played by the link region, where the extrinsic base electrode is linked to the inner base (see [26]); as a consequence, the extrinsic base resistance R Bx is much higher than R Bi .…”

Section: Impact Ionizationmentioning

confidence: 99%

“…In [25], a dc method relying on special dual-base tetrode test structures has been adopted to extract the sheet resistance of the base components. More recently, a variant of the approach presented in [14] has been exploited to assess the sum of the base and emitter resistances of advanced SiGe:C HBTs fabricated by Innovation for High Performance microelectronics and IFX within the DOTSEVEN project [26].…”

Section: Introductionmentioning

confidence: 99%

“…In (a), also illustrated is the behavior of the intrinsic resistance R Bi , as calculated by (24)-(26) for W E = 0.16 μm (emitter width of the reference device).…”

mentioning

confidence: 99%

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Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2016

IEEE Trans. Electron Devices

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This paper presents an improved variant of a dc method to experimentally evaluate the base resistance of a bipolar transistor. The technique relies on a device model associated with a simple parameter optimization methodology, and is suited for modern technologies wherein self-heating and impact-ionization effects play a relevant role. The approach is successfully applied to state-of-the-art SiGe:C heterojunction bipolar transistors for high-frequency applications, although it can in principle be exploited for any bipolar device. The accuracy of the method is verified by numerical and experimental procedures.

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Section: Impact Ionizationmentioning

confidence: 94%

Section: B Proposed Improvementmentioning

confidence: 99%

Section: Impact Ionizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…In (a), also illustrated is the behavior of the intrinsic resistance R Bi , as calculated by (24)-(26) for W E = 0.16 μm (emitter width of the reference device).…”

mentioning

confidence: 99%

See 3 more Smart Citations

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2016

IEEE Trans. Electron Devices

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Review on CeO₂-Based Photocatalysts for Photocatalytic Reduction of CO₂: Progresses and Perspectives

Cai

Jiang

et al. 2023

Energy Fuels

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A promising approach is to transform carbon dioxide (CO2) into renewable, high value-added products with minimal environmental impact and maximum efficiency. Many problems, including energy shortages and environmental degradation, are caused by high CO2 levels, but this can help. Photocatalytic reduction methods are a promising technology for solving these problems. Cerium dioxide (CeO2) is one of the most important rare earth oxides, and cerium dioxide-based photocatalysts have gained a lot of attention in recent years due to their distinctive features, such as their tunable electronic structures and their excellent photocatalytic performances. However, the wide energy band of cerium oxide limits its utilization of light. This review provides various strategies for the modification of cerium oxide, encompassing external atom doping, heterostructure fabrication, defect fabrication, and crystal plane modulation, to improve the catalytic performance of CeO2. The fundamentals of the conversion of CeO2-based photocatalysts into high value-added products are also summarized. Finally, the challenges and prospects of CeO2-based catalysts for photocatalytic reduction of CO2 are presented.

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Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

Eneman

Roussel

Brunco

et al. 2016

Journal of Applied Physics

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The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the ⟨100⟩ and ⟨110⟩ directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Cited by 33 publications

References 12 publications

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

Review on CeO₂-Based Photocatalysts for Photocatalytic Reduction of CO₂: Progresses and Perspectives

Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Cited by 33 publications

References 12 publications

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

Review on CeO2-Based Photocatalysts for Photocatalytic Reduction of CO2: Progresses and Perspectives

Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

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Product

Resources

About

Review on CeO₂-Based Photocatalysts for Photocatalytic Reduction of CO₂: Progresses and Perspectives