Advanced binary film for 193nm lithography extension to sub-32-nm node

Nozawa, Osamu; Shishido, Hiroaki; Hashimoto, Masahiro; Ohkubo, Yasushi; Mitsui, Hideaki

doi:10.1117/12.866006

Cited by 2 publications

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“…The International Technology Roadmap for Semiconductors (ITRS) 3 has specied 20 nm DRAM half-pitch (hp) and 14 nm Flash halfpitch as target resist requirements for 2016. Whilst it has been possible to extend current 193 nm photolithography far beyond expectation, to allow sub-30 nm patterning, 4,5 this has been at the cost of greatly increased complexity of the patterning or post-exposure processing, 6 which dramatically impacts yield and cost. Electron-beam lithography (EBL), traditionally considered to be high-resolution but slow, has primarily found application in the semiconductor industry for the fabrication of reticles.…”

Section: Introductionmentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

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Section: Introductionmentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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“…In the low-n and high-k region, we find candidate that has optical parameters similar with the optimized fictitious material. This candidate material has already been evaluated in the latest studies and improved continuously [5], [6] .…”

Section: -2 Evaluation Of Actual Mask Blank Materialsmentioning

confidence: 97%

Mask blank material optimization impact on leading-edge ArF lithography

et al. 2011

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ABSTRUCTIn this study, we investigate what kind of mask blank material is optimum for the resolution enhancement techniques (RET) of leading-edge ArF lithography. The source mask optimization (SMO) is one of the promising RET in 2Xnm-node and it optimizes mask pattern and illumination intensity distribution simultaneously. We combine SMO with the blank material optimization and explore the truly optimized SMO.This study consists of three phases. In the first phase, we evaluate maximum exposure latitude (Max.E.L.) and mask error enhancement factor (MEEF) of fictitious materials that have typical real (n) and imaginary (k) value of refractive index by 3D rigorous simulator as the basic analysis. The simulation result shows that there are two high lithographic performance combinations of n and k values; one is low-n/high-k and the other is high-n/low-k.In the second phase, we select actual blank material that has similar optical parameters with the result of the previous phase. The lithographic performance of the selected material is investigated more precisely. We find that the candidate material has good lithographic performance at the semi-dense pitch.In the final phase, we create a test mask of this candidate blank material and verify simulation result by experimental assessment. The exposures are performed on NA1.30 immersion scanner (Nikon NSR-S610C). The experimental result shows the improvement of Max.E.L. in head to head type pattern.This study will discuss the potential of blank material tuning for the ArF lithography extension.

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Advanced binary film for 193nm lithography extension to sub-32-nm node

Cited by 2 publications

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Chemically amplified phenolic fullerene electron beam resist

Chemically amplified phenolic fullerene electron beam resist

Mask blank material optimization impact on leading-edge ArF lithography

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