Abstract:ABSTRUCTIn this study, we investigate what kind of mask blank material is optimum for the resolution enhancement techniques (RET) of leading-edge ArF lithography. The source mask optimization (SMO) is one of the promising RET in 2Xnm-node and it optimizes mask pattern and illumination intensity distribution simultaneously. We combine SMO with the blank material optimization and explore the truly optimized SMO.This study consists of three phases. In the first phase, we evaluate maximum exposure latitude (Max.E.… Show more
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