2010
DOI: 10.1063/1.3457786
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Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

Abstract: Lee, J. H.; Ke, X.; Misra, R.; Ihlefeld, J. F.; Xu, X. S.; Mei, Z. G.; Heeg, T.; Roeckerath, M.; Schubert, J.; Liu, Z. K.; Musfeldt, J. L.; Schiffer, P.; and Schlom, D. G., "Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy" (2010).

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Cited by 50 publications
(18 citation statements)
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References 26 publications
(32 reference statements)
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“…A direct bandgap value of 1.96 eV is calculated at the point (center of the BZ) and this value indeed falls in the visible region of the spectra. Such a calculated low band-gap value is in line with the general trend from the Bi-based transition metal perovskite family, e.g., BiCrO 3 (1.5 eV) [27], BiMnO 3 (1.1 eV) [28], BiFeO 3 (2.5 eV) [29].…”
Section: B Electronic Propertiessupporting
confidence: 63%
See 1 more Smart Citation
“…A direct bandgap value of 1.96 eV is calculated at the point (center of the BZ) and this value indeed falls in the visible region of the spectra. Such a calculated low band-gap value is in line with the general trend from the Bi-based transition metal perovskite family, e.g., BiCrO 3 (1.5 eV) [27], BiMnO 3 (1.1 eV) [28], BiFeO 3 (2.5 eV) [29].…”
Section: B Electronic Propertiessupporting
confidence: 63%
“…Several perovskites have shown stable photocatalytic activity under illumination, e.g., SrTiO 3 [21], NaTaO 3 [22], KTaO 3 [22], AgTaO 3 [23]. Many Bi-based (especially with transition metals) low band-gap semiconductors have also been realized, e.g., BiVO 4 (2.4 eV) [24], BiInO 3 (2.08 eV) [25], BiGaO 3 (2.03 eV) [26], BiCrO 3 (1.5 eV) [27], BiMnO 3 (1.1 eV) [28], BiFeO 3 (2.5 eV) [29]. In addition to the observed catalytic activity, Bi-based (Bi 3+ ) oxide perovskites have recently gained much interest due to their multifunctionality [30,31].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, BMO is metastable, which makes its fabrication very difficult. Previous studies have pointed out that the bulk phases of BMO have to be synthesized by the high-pressure method [7] and the growth of pure phase BMO epitaxial films can only be achieved by strain engineering [6,8,9]. These drawbacks of BFO and BMO materials inevitably limit their practical applications on spintronic devices, especially in RT environment.…”
Section: Introductionmentioning
confidence: 99%
“…A good control of the deposition parameters is extremely important to avoid the formation of competing phases, like BMO þ Mn 3 O 4 and BMO þ Bi 2 O 2.5 , as observed by Lee et al 8 In particular, the temperature and the background oxygen during the physical vapor deposition play an important role on the realization of single phase epitaxial BMO films.…”
mentioning
confidence: 99%