Adhesion properties on nanometric scale of silicon oxide and silicon nitride surfaces modified by 1‐octadecene

Abstract

Silicon oxide and silicon nitride surfaces have been treated with 1-octadecene at ∼200• C . The resulting film topography has been inspected by atomic force microscopy (AFM), showing a densely packed organic coating with a corrugation of some tenths of a nanometre. High-mass-resolution time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra from such surfaces display octadecene-as well as substraterelated peaks. Furthermore, peaks diagnostic of the formation of SiOC or SiC linkages are observed in the case of silicon oxide, whereas the same peaks and those due to SiNC species have been observed in the case of silicon nitride. These results suggest that 1-octadecene molecules are chemisorbed on the substrate. Contact angle measurements and AFMforce spectroscopy measurements allow comparison upon the macroscopic and nanoscopic scale, respectively, of the surface free energy modification due to the formation of the organic coating.

Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition

“…These Pt at % values are comparable to those for non-chemically treated, dielectric reference samples in the same ALD run. We note that, in contrast to our observations, previous studies have reported that 1-octadecene can chemisorb onto SiO 2 and Si 3 N 4 surfaces, [14,15] However, a subsequent spectroscopic study showed that those results might be due to the existence of SiH x sites after surface treatment, leaving the surface with reactive groups like those present on bare silicon instead of only SiO 2 or Si 3 N 4 . [16] In our study, we used piranha treatment before HF etching and this hydroxylated the hydrophilic dielectric surface.…”

Force measurements with the atomic force microscope: Technique, interpretation and applications

“…These surface free energies matched closely the results obtained from contact angle measurements on these SAMs. Organic coating of silicon oxide and silicon nitride by 1-octadecene decreased the surface energies by a factor of $1.5 as deduced from adhesion force measurements and contact angles [384].…”

Selective chemical modification of silicon nitride/silicon oxide nanostructures to develop label-free biosensors

“…Derivatization techniques exploit the reactivity of the surface silicon-hydrogen (Si-H x ) or Si-N bonds. In the first case, silicon nitride is modified with long chain alkenes or alkynes by thermal (Pignataro et al, 2002;Arafat et al, 2004Arafat et al, , 2007 or photochemical activation (Coffinier et al, 2007). Regarding reactivity through the Si-N-H moieties on silicon nitride surfaces, Karymov et al (1995) modified chemical surfaces with halogen derivatives of ethane and propane; further covalent bonding with the DNA base amino group requires heating at 65 • C, so, a general application is not possible since most proteins undergo thermal denaturation.…”