Adhesion–delamination phenomena at the interfaces of the dielectric layer

Pan, Cheng‐Tang; Wu, Chia‐Ching; Mao, Shih-Wei; Wang, S.Y.; Ju, Shin‐Pon; Wu, Jialin; Yen, Chen‐Wen; Chen, W.F.

doi:10.1016/j.rinp.2020.103249

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…In addition, we could not observe any surface deformation after several hundred bending cycles. In general, macroscopic defects, such as microcracks and delamination, are primarily caused by poor adhesion [ 55 ], and a strong adhesion between the substrate and the thin film formed by energetic particles during sputtering would prevent the occurrence of macroscopic defects. Although unipolar resistive switching behavior in the intermediate phase does not show good reliability, bistable resistive switching behaviors showed up to 500 times of bending cycles (Additional file 1 : Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

et al. 2022

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Flexible electronics has attracted considerable attention owing to its enormous potential for practical applications in various fields. However, the massive strain produced during bending degrades the device. Especially at grain boundaries, due to the accumulation of defects, this degradation is exacerbated in flexible electronic devices. The importance of electrically inactivated grain boundaries increases as devices scale down to the nanoscale. Here, we propose an HfO2-x thin film that can be used as an excellent material for flexible electronics with versatile functionality, especially for grain boundary passivation. Various electrical phases of HfO2-x thin films with conducting to insulating behavior, which originates from oxygen deficiency, have been fabricated on flexible substrates. Furthermore, owing to the most stable charge state of oxygen vacancies, oxygen-deficient HfO2-x shows p-type conductivity. Current mapping by conductive atomic force microscopy reveals that current flow is hindered at grain boundaries due to the formation of potential barriers. This phenomenon is also observed in bent flexible thin films on convex and concave molds, leading to tensile and compressive strains, respectively. Although the defect concentration increases because of lattice deformation during bending, more holes are trapped at the grain boundaries, resulting in an increased hole barrier height. We believe that grain boundary passivation through hole barrier modulation during bending would pave the way for advances in hafnia-based nanoscale flexible electronics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

et al. 2022

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“…However, such structural changes often result in the other device properties such as thermo-mechanical properties, low dielec and CTE matching. Therefore, in the case of delamination failure, we should account the impact of other package performances [78]. Nowadays, the mor anti-delamination structural changes are mainly focused on five aspects: (1 The second solution path is to change the structure of the package to realize the complete isolation of the device failure path, which results in a decisive improvement in the delamination failure.…”

Section: The Most Recent Solutions For Delamination Failurementioning

confidence: 99%

“…However, such structural changes often result in the degradation of other device properties such as thermo-mechanical properties, low dielectric properties, and CTE matching. Therefore, in the case of delamination failure, we should also take into account the impact of other package performances [ 78 ]. Nowadays, the more cutting-edge anti-delamination structural changes are mainly focused on five aspects: (1) adding a thin film layer on the surface of the RDL; (2) optimization of polymer fillers; (3) introduction of second-phase modifiers for EMC; (4) conjugated polymer self-healing technology; and (5) interfacial buffer layer technology.…”

Section: The Most Recent Solutions For Delamination Failurementioning

confidence: 99%

Delamination of Plasticized Devices in Dynamic Service Environments

Tian,

Chen,

Zhang

et al. 2024

Micromachines

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With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices. In this paper, the delamination failure mechanism of polymer-based packaging devices is clarified by summarizing the relevant literature and the latest research solutions are proposed. The results show that, at the microscopic scale, thermal stress and moisture damage are still the two main mechanisms of two-phase interface failure of encapsulation devices. Additionally, the application of emerging technologies such as RDL structure modification and self-healing polymers can significantly improve the thermal stress state of encapsulation devices and enhance their moisture resistance, which can improve the anti-delamination reliability of polymer-based encapsulation devices. In addition, this paper provides theoretical support for subsequent research and optimization of polymer-based packages by summarizing the microscopic failure mechanism of delamination at the two-phase interface and introducing the latest solutions.

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Analysis of Thermally Grown Oxides on Microperforated Copper Sheets

Ziȩba

Maj

Siwek

et al. 2023

J. of Materi Eng and Perform

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Copper oxides have some interesting photocatalytic properties and reasonably low price which makes them applicable as PN transistors. However, to obtain the best performance it is necessary to increase the specific working surface of materials which plays a key role in many applications. Furthermore, by ordered spacing and heterojunction formation it is possible to fabricate the systems with specific dedicated properties, like for example PN photovoltaic junction. The conducted research analyses the mechanical properties, stress distributions, and thermal stability of metal–oxide structures with such advanced geometries. Micro-perforation of thin Cu sheet was selected for the study, as it can both enhance the free surface of the substrate and decrease the number of sites of thermal stress occurrence. Both Cu-Cu2O and Cu-CuO layers were simulated using finite element analysis. The model based on fixed geometry of square shaped samples of dimensions of 156 × 156 mm was applied to thin metal plates holes-patterned covered on top by 1-3 μm thick oxide layers. On the other hand, the influence of plate thickness was found to be important in terms of structure durability. A good agreement between the simulation and the experimental data was achieved. The critical delamination temperature of c.a. 473-483 K was estimated for both oxide layers. The verification of the simulation/computation model was done by analyzing perforated and non-perforated Cu Electrolytic Tough Pitch (ETP) sheets. Two methods, FIB-TEM and surface scan using a profilometer, were selected. The first verified the decohesion of the oxide coatings from the metal support after exceeding the temperature of 523 K The issue that was also noticed is the susceptibility for peeling in the inner surface of the holes.

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Adhesion–delamination phenomena at the interfaces of the dielectric layer

Cited by 6 publications

References 12 publications

Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

Delamination of Plasticized Devices in Dynamic Service Environments

Analysis of Thermally Grown Oxides on Microperforated Copper Sheets

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