Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Tsatsulnikov, A. F.; Lundin, W. V.; Sakharov, A. V.; Заварин, Е. Е.; Usov, S. O.; Николаев, А. Е.; Cherkashin, Nikolay; Ber, B. Ya.; Kazantsev, D. Yu.; Мизеров, М. Н.; Park, Hee Seok; Hÿtch, Martin; Hüe, Florian

doi:10.1134/s1063782610010161

Cited by 12 publications

(7 citation statements)

References 9 publications

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“…The dependence of LED efficiency on thickness of LT-GaN between SL and QW is very strong at low thickness and nearly saturates around 10-15 nm, but some rise may be observed until 20-25 nm. The role of this LT-GaN seems to be the same as in previously reported blue LEDs [10]-just to prevent injected holes overflow from QW to InGaN/ GaN SL. The optimal value of undoped GaN barrier above the QW is about 5 nm.…”

Section: Optimization Of Deep-green Led Structurementioning

confidence: 72%

“…1) [10][11][12] by alternating growth of In 0.1 Ga 0.9 N and growth interruption (GI) where the alkyl precursors were switched off and the carrier gas composition was changed from pure N 2 to a mixture of N 2 :H 2 ¼7:3. In this procedure, the indium concentration on the surface is governed by an interplay between InGaN decomposition during the GI, indium segregation, desorption, and incorporation into InGaN during subsequent growth.…”

Section: Methodsmentioning

confidence: 99%

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Lundin

Николаев

Sakharov

et al. 2011

Journal of Crystal Growth

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Section: Optimization Of Deep-green Led Structurementioning

confidence: 72%

Section: Methodsmentioning

confidence: 99%

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Lundin

Николаев

Sakharov

et al. 2011

Journal of Crystal Growth

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“…LEDs with SPSLs having graded and constant In content were investigated. It was shown that graded top SPSL leads to pronounced improvement of the emission efficiency [4], that can be explained by better hole injection [7]. Emission efficiencies of the LEDs with bottom SPSL having graded and constant In content were close.…”

Section: Resultsmentioning

confidence: 97%

“…The InGaN/GaN SPSLs in the investigated structures were formed using a InGaNconversion technique [4,5] by alternating growth of In 0.1 Ga 0.9 N and growth interruption (GI) where the alkyl precursors were switched off and the carrier gas composition was changed from pure N 2 to a mixture of N 2 :H 2 = 7:3. Thickness of each layer in the SPSL was ~1.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN short‐period superlattices: synthesis, properties, applications

Tsatsulnikov

Lundin

Сахаров

et al. 2011

Phys. Status Solidi C

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InGaN/GaN short‐period superlattices were fabricated using method based on cycle conversion of surface InGaN layer to GaN by applying of growth interruptions in hydrogen atmosphere. SPSLs having total thickness from 12 nm to 120 nm were grown and investigated by combination of optical methods, XRD and high resolution transmission electron microscopy (HRTEM) with geometric phase analysis. Blue, deep green (540‐560 nm) and monolithic white LEDs (containing in active region green and blue InGaN QWs separated by the SPSL or GaN barrier) were grown and investigated. Deep green LEDs have maximal external quantum efficiency of 8‐16% in the range of 560‐540 nm correspondingly. Monolithic white LED structures with CCT in the range of 5000‐6000 K have maximal external quantum efficiency of more than 6%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…A Si-doped n-GaN layer is grown on buffer GaN layer. Short period superlattice (SPSL) with following low-temperature grown i-GaN barrier layer is grown over the n-GaN to improve emission efficiency as was shown both for blue and green LEDs [20,21]. The SPSL are grown, as described by Lundin et al, by conversion method [21].…”

Section: Device Structure and Experimentsmentioning

confidence: 99%

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Yadav

Titkov²,

Sakharov

et al. 2018

Applied Sciences

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Abstract:We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm 2 to 12.9 A/cm 2 . It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Cited by 12 publications

References 9 publications

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

InGaN/GaN short‐period superlattices: synthesis, properties, applications

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

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