Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Lundin, W. V.; Николаев, А. Е.; Sakharov, A. V.; Заварин, Е. Е.; Valkovskiy, G. A.; Yagovkina, M. A.; Usov, S. O.; Kryzhanovskaya, N. V.; Sizov, V. E.; Brunkov, P. N.; Закгейм, А. Л.; Cherniakov, A. E.; Cherkashin, Nikolay; Hÿtch, Martin; Yakovlev, E.V.; Bazarevskiy, D.S.; Rozhavskaya, M. M.; Tsatsulnikov, A. F.

doi:10.1016/j.jcrysgro.2010.09.043

Cited by 35 publications

(15 citation statements)

References 12 publications

(14 reference statements)

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“…There are some growth “tricks” that can be used to overcome some of the issues. These include using underlayers such as an InGaN/GaN superlattice to engineer the strain in the overlying QW active regions that is particularly helpful at green wavelengths .…”

Section: Improved Power‐conversion Efficiency: Blue Ldsmentioning

confidence: 99%

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Wierer

Tsao

Sizov

2013

Laser & Photonics Reviews

485

244

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Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.

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Section: Improved Power‐conversion Efficiency: Blue Ldsmentioning

confidence: 99%

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Wierer

Tsao

Sizov

2013

Laser & Photonics Reviews

485

244

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“…As the emission wavelength of the InGaN QWs shift from blue to green spectral regimes, however, the internal quantum efficiency (IQE) decreases significantly, resulting in a problem that is often referred to as the “green gap;” reportedly, this problem is due to the high‐density defects that result from a large lattice misfit (11%) between the InN and GaN, and high QW polarization fields that lead to a reduction of the ratio involving the radiative recombination rate and the non‐radiative recombination rate . There have been numerous studies to overcome the green gap problem including the use of the following: non‐polar or semipolar GaN templates , InGaN‐based quantum dots (QDs) for active regions , and short‐period superlattices . These methods, however, require an additional fabrication step to slice the as‐grown templates along the desired plane, a complicated growth procedure to form QDs, and/or an exact analysis of the composition‐ratio variation with the growth temperature to achieve lattice‐matching conditions.…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN‐based green‐light‐emitting diodes with an inserted InGaN/GaN‐graded superlattice layer

Park

Jung

Ji³

2016

Physica Status Solidi (a)

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In this study, InGaN-based green light-emitting diodes (LEDs) with a graded-superlattice (GSL) layer inserted between the 3 mm thick n-type GaN and the multiple quantum wells (MQWs) were studied numerically and experimentally. The simulated results indicate that the use of GSL inserting layer consisting of 12-stacked InGaN/GaN layers leads to the enhancement of electron injection into the MQWs resulting in the increase of radiative recombination rate, suppressing the electron overflow to the p-GaN side. The photoluminescence and output power of the GSL LEDs show a 73.5 and 42.5%, respectively, in a comparison with the reference LEDs that has no inserting layer. This improvement with the GSL LEDs indicates that the GSL insertion layer acts not only as a stressrelaxing buffer layer releasing the residual stress in MQWs, but also as an electron cooler enhancing the electron capture rate in MQWs.

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“…A Si-doped n-GaN layer is grown on buffer GaN layer. Short period superlattice (SPSL) with following low-temperature grown i-GaN barrier layer is grown over the n-GaN to improve emission efficiency as was shown both for blue and green LEDs [20,21]. The SPSL are grown, as described by Lundin et al, by conversion method [21].…”

Section: Device Structure and Experimentsmentioning

confidence: 99%

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Yadav

Titkov²,

Sakharov

et al. 2018

Applied Sciences

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Abstract:We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm 2 to 12.9 A/cm 2 . It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Cited by 35 publications

References 12 publications

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

InGaN/GaN‐based green‐light‐emitting diodes with an inserted InGaN/GaN‐graded superlattice layer

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

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