Active Power Device Selection in High- and Very-High-Frequency Power Converters

Zulauf, Grayson; Tong, Zikang; Plummer, J.D.; Rivas-Davila, Juan

doi:10.1109/tpel.2018.2874420

Cited by 69 publications

(58 citation statements)

References 35 publications

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“…ARGE-SIGNAL analysis of the output capacitance (COSS) of transistors has great importance in the design of power converters, as the small-signal COSS values are not always valid in the switching transients, especially when hysteresis exists [1]- [4]. The COSS hysteresis can lead to a considerable power loss which is not recoverable with soft switching topologies [5]- [8]. The significant energy dissipation observed in the charging and discharging process of the output capacitance of some Si superjunction (SJ) MOSFETs initiated studies on their large-signal COSS [8], [9].…”

Section: Introductionmentioning

confidence: 99%

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Nikoo

Jafari

Perera

et al. 2020

IEEE Trans. Power Electron.

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In this letter, we present a new measurement technique to evaluate the large-signal output capacitance (COSS) of transistors as well as the COSS energy dissipation (EDISS), based on the nonlinear resonance between a known inductor and the output capacitance of the device under test. The method is simple and robust, and only requires a single voltage measurement to extract the large-signal COSS both in charging and discharging transients. By changing the circuit parameters, it is possible to tune the resonance frequency (even above 40 MHz) and the voltage swing (even above 1 kV) with dv/dt exceeding 100 V/ns, even though the method relies only on a low-voltage DC source, without the need for high-voltage RF amplifiers. The single-pulse operation of the method enables measuring COSS and EDISS at very high frequency and dv/dt values without any thermal runaway. Using the proposed method, we extracted large-signal COSS and EDISS of power transistors based on different semiconductor technologies. The obtained results were verified by Sawyer-Tower method and data reported in the literature. The precise characterization of large-signal COSS of transistors presented in this letter is essential for the design of power converters, especially those operating at high switching frequencies.

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Section: Introductionmentioning

confidence: 99%

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Nikoo

Jafari

Perera

et al. 2020

IEEE Trans. Power Electron.

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“…The switching characteristics of the power semiconductor devices are highly dependent on the voltage-dependent parasitic capacitances. At high frequencies, the effect of these voltage dependent capacitances is profound, but their impact is largely overlooked by the researchers [1]˗ [4].…”

Section: Introductionmentioning

confidence: 99%

“…However, it can also result in significant errors [7]. The concept of Ceff is correct for the specific VDS point selected as the upper integral boundary in (1), meaning that the energy calculated using ½CeffVDS 2…”

Section: Introductionmentioning

confidence: 99%

A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

Jadli

Mohd-Yasin

Moghadam

et al. 2020

IEEE Trans. Power Electron.

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The parasitic capacitances of semiconductor power devices that contribute to the switching losses are voltagedependent, which can make calculations of their stored energy difficult. Typically, manufacturers will provide effective capacitance values to aid in circuit design and component selection. However, stored energy calculations using these effective capacitor values are erroneous. In this paper, we derive a new equation for the stored energy in the voltage-dependent capacitance associated with a semiconductor depletion region, such as in diodes and transistors. In particular, we show that the ½ term in ½CV 2 should be replaced by a new term γ, which depends on the device structure. By applying our proposed method to several commercial diodes and transistors, we show that it matches the measured data much better than using the effective capacitances. The proposed equation will enable better power circuit design by improving the accuracy of stored energy calculations. 1

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“…20 shows the simulated loss breakdown across the different components at this maximum power level. To accurately predict the losses, the C oss losses of the GaN transistors are also included in the simulation using the equations from [47]. The actual circuit is implemented on a standard 4-layer FR-4 PCB using the component values from the simulation.…”

Section: A Circuit Designmentioning

confidence: 99%

Modular ON/OFF and Phase-Shifting for High-Speed Radio Frequency Power Modulation

Surakitbovorn

Rivas-Davila

2020

IEEE Open J. Power Electron.

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Radio frequency (RF) power amplifiers are an integral part of many academic, medical, and industrial applications. For many of these applications, the RF power needs to quickly transition from one level to another. For switched-mode amplifiers, one way to achieve this is with an out-phasing modulation technique. This power control technique, however, presents its own disadvantages, including poor light-load efficiency and an increase in overall system size. In this paper, we present an alternative power modulation method to create a high-efficiency high-speed RF amplifier system. This control technique utilizes two mechanisms, modular on/off and phase-shifting. In modular on/off, a different number of sub-circuits are turned "on" or "off" to crudely adjust the output power. In phase-shifting, the smallest sub-circuit of the whole system is phase-shifted away from the rest of the circuit to fine-tune the output power. This system's performance is first compared with existing out-phasing systems via circuit simulation. Then, an actual circuit implementation with a 13.56-MHz, 1500-W RF amplifier is demonstrated. A 93% dc-to-RF efficiency is achieved at full load, and above 80% efficiency is maintained all the way down to 7% load.

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Active Power Device Selection in High- and Very-High-Frequency Power Converters

Cited by 69 publications

References 35 publications

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

Modular ON/OFF and Phase-Shifting for High-Speed Radio Frequency Power Modulation

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Active Power Device Selection in High- and Very-High-Frequency Power Converters

Cited by 69 publications

References 35 publications

Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance

Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance

A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

Modular ON/OFF and Phase-Shifting for High-Speed Radio Frequency Power Modulation

Contact Info

Product

Resources

About

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance