Achieving accuracy in transistor and thyristor modeling

Adler, M.S.; Possin, G. E.

doi:10.1109/t-ed.1981.20484

Cited by 16 publications

(3 citation statements)

References 20 publications

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“…Inclusion of Fermi-Dirac statistics would worsen the discrepancy between theory and experiment. Our conclusions are contrary to the assertions of [30] but are consistent with previous numerical treatments of the problem [32][33][34][35]. Our analysis, therefore, reinforces the importance of bandgap narrowing in silicon devices.…”

Section: Introductionsupporting

confidence: 75%

“…in (A. 28), depends not only on the total bandgap narrowing but also on the asymmetry in bandgap narrowing, contrary to the conclusion in [35].…”

Section: Ccontrasting

confidence: 60%

“…Analytic approximations for C(n), for -4 < n < +12, which introduces errors of less than 2.5%, are given in Appendix C. Use of (A. 14) in We therefore define n [35]. However, if the electrons or holes are degenerate, the minority-carrier current, via its dependence on n?…”

Section: Cmentioning

confidence: 99%

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Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells / by Muhammed Ayman Shibib.

Shibib¹

1979

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This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices. A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi-Dirac statistics, a phenomenological excess intrinsic carrier density (or deficit impurity concentration), Auger recombination in the bulk, and recombination at the surface. These mechanisms are incorporated in a first-order model useful in the design of silicon pn-junction solar cells. The accuracy of the first-order model is supported by comparing its results with the results of more detailed models and of a numerical vn analysis of the problem. Experimental data are presented that are consistent with the predictions of the first-order model and of the numerical solution. VI 11 CHAPTER I to Auger recombination are responsible for the large emitter recombination currents observed in pn-junction devices.

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