Accurate GaN HEMT nonquasi‐static large‐signal model including dispersive effects

Crupi, Giovanni; Raffo, Antonio; Schreurs, Dominique; Avolio, Gustavo; Vadalà, Valeria; Falco, Sergio Di; Caddemi, Alina; Vannini, G.

doi:10.1002/mop.25757

Cited by 35 publications

(21 citation statements)

References 23 publications

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“…One of initial kind of detailed small signal [18]. In recent past many researchers have developed variety of techniques and methods according to their used material system and conventional device structures [19], [20]. Requirement for development of small signal model for DMG AlGaN/GaN HEMT structure is felt since long but no such model for enhanced device structure is reported in recent past.…”

Section: Introductionmentioning

confidence: 99%

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TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

Yadav¹,

Pathak²,

Mehra³

2017

IJECE

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This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to its dual material gate structure and field plate that can provide better electric field uniformity, suppression of short channel effects and improvement in carrier transport efficiency. In this article we used direct parameter extraction methodology in which S-parameters of device were measured using pinchoff cold FET biasing. The measured S-parameters are then transformed into Y-parameters to extract capacitive elements and then in to Z-parameters to extract series parasitic elements. Intrinsic parameters are extracted from Y-parameters after de-embedding all parasitic elements of devce. Microwave figure of merits and dc performance are also studied for proposed HFET. The important figure of merits of device reported in the paper include transconductance, drain conductance, current gain, transducer power gain, available power gain, maximum stable gain, maximum frequency of oscillation, cut-off frequency, stability factor and time delay. Reported results are valdated with experimental and simulation results for consistency accuracy. Keyword:Cutoff frequency HEMT model Microwave figure of merits Parameters extraction Small signal model

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Section: Introductionmentioning

confidence: 99%

“…The device simulation and measured gains [19], [30] are plotted as a function of frequency at a gate bias of V gs =-1V in Figure 6(b). On comparison the results and found to be within close conformity thus validating device performance in microwave frequency range.…”

mentioning

confidence: 99%

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

Yadav¹,

Pathak²,

Mehra³

2017

IJECE

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“…Nowadays, extensive attention is being paid to the HEMT based on GaN, primarily because of the outstanding physical properties of this wide‐band‐gap semiconductor for microwave high‐power applications . Although research studies have been mainly addressed to analyze the GaN HEMT in terms of power performance, a growing attention is being given also to its noise performance.…”

Section: Introductionmentioning

confidence: 99%

GaN HEMT noise modeling based on 50‐Ω noise factor

Crupi

Caddemi

Raffo

et al. 2015

Micro & Optical Tech Letters

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The extraction of a high-frequency ivalent circuit model plays a fundamental role for the development of any emerging transistor technology. Indeed, an equivalent circuit can provide a valuable support for microwave engineers to ensure a fast and reliable optimization of both device fabrication and circuit design. As far as gallium nitride (GaN) HEMTs are concerned, research efforts have been mostly focused on determining equivalent circuits able to reproduce their large-signal behavior. Nevertheless, an increasing amount of interest is also being devoted to noise equivalent circuits, due to the interesting GaN technology noise performance. Within this context, the purpose of the present paper is to extract and fully validate an accurate noise model for GaN HEMTs based on a simple, fast, and reliable extraction procedure. The noise model is obtained by assigning an equivalent noise temperature to each resistor of the small-signal equivalent circuit. The accuracy of the extracted noise model is confirmed by the good agreement between measured and simulated high-frequency noise parameters

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“…Analysis and modeling of nonlinear circuits due to evaluate, simulate and compensate their performance metrics such as intermodulation distortion (IMD) had been studied for decades [3][4][5][6][7][8], which necessitates using the accurate reliable CAD tools and numerical algorithms. There are many different techniques for numerical analysis of nonlinear microwave circuits.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear analysis of microwave amplifiers excited by multicarrier modulated signals using envelop transient technique

Vaezi

Abdipour

Mohammadi

2012

Analog Integr Circ Sig Process

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In this paper, an envelope transient-multi-tone harmonic balance (ET-MHB) technique is introduced. It is shown that this technique is an efficient method to obtain the response of a nonlinear microwave amplifier when it is excited by multi-carrier modulated signals. This method indeed extended ET-HB method to characterize the multi-carrier modulated signals by using multi-tone HB simulation. To accelerate the simulation speed two formulation of ET-MHB are presented. They called ET-MDHB and ET-FMHB. These formulas provide a compact form which simplify and accelerate the computer simulations. Then, the proposed methods are applied to analyze a nonlinear microwave amplifier. The circuit is investigated under excitation of single-tone modulated, 4-tone un-modulated, and 4-tone digitally modulated signals. The results show the accuracy, time efficiency, and simplicity of the new formulations.

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Accurate GaN HEMT nonquasi‐static large‐signal model including dispersive effects

Cited by 35 publications

References 23 publications

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

GaN HEMT noise modeling based on 50‐Ω noise factor

Nonlinear analysis of microwave amplifiers excited by multicarrier modulated signals using envelop transient technique

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