TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

Abstract

This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to its dual material gate structure and field plate that can provide better electric field uniformity, suppression of short channel effects and improvement in carrier transport efficiency. In this article we used direct parameter extraction methodology in which S-parameters of device were measured using pinchoff cold FET biasing. The measured S-parameters are then transformed into Y-parameters to extract capacitive elements and then in to Z-parameters to extract series parasitic elements. Intrinsic parameters are extracted from Y-parameters after de-embedding all parasitic elements of devce. Microwave figure of merits and dc performance are also studied for proposed HFET. The important figure of merits of device reported in the paper include transconductance, drain conductance, current gain, transducer power gain, available power gain, maximum stable gain, maximum frequency of oscillation, cut-off frequency, stability factor and time delay. Reported results are valdated with experimental and simulation results for consistency accuracy. Keyword:Cutoff frequency HEMT model Microwave figure of merits Parameters extraction Small signal model

A modeling and performance of the triple field plate HEMT

“…It is therefore possible to calibrate the HEMT model using simplified device geometry, so care should be taken to find initial values as close as possible to the optimal calibration point. From the score the optimizer generates a new set of model parameters which are then used for the next simulation run [21].…”

Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges

“…[11][12][13][14][15] Later on, Kumar et al adopted this technique and proposed dual material gate (DMG) HEMT 16,17 with enhanced average carrier velocity. Further analysis of DMG HEMT has been performed by Yadav et al [18][19][20][21] Recent addition to the device technology is triple material gate metal oxide semiconductor field effect transistor (TMG MOSFET) where three metals with varying work function are used to form the gate contact. Various theoretical and simulation studies with this structure have revealed its better performance with respect to DMG as well as single material gate (SMG) MOSFET in terms of suppressed SCEs and high carrier velocity.…”

Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

“…The largest concerns in semiconductor integrated circuits are high-speed operation and low power consumption [4]. Since the 90s, a new generation of semiconductor components (HEMT) is under study and evaluation thanks to the advent of wide band gap materials such as GaN [5], GaN based devices are very useful for high frequency high temperature microwave applications such as radar systems [6]. Transistors AlGaN / GaN HEMTs results are very promising for power electronics and high frequency due to their two-dimensional electron gas 2DEG high density and high mobility as well as to their high breakdown field [7].…”