Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

Usikov, A.; Soukhoveev, V.; Kovalenkov, O. V.; Syrkin, A. L.; Shapovalov, Liza; Volkova, Anna; Ivantsov, V.

doi:10.7567/jjap.52.08jb22

Cited by 13 publications

(10 citation statements)

References 23 publications

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“…In particular, the concentration of carbon, which creates deep-level defects, can be reduced down to 10 15 cm −3 (ref. 6), and the concentrations of oxygen and silicon (both acting as shallow donors in GaN) can be reduced down to 2 × 10 16 and 2 × 10 15 cm −3 , respectively789. All these values are at the detection limit of SIMS measurements.…”

mentioning

confidence: 91%

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Reshchikov

McNamara

Toporkov

et al. 2016

Sci Rep

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Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL bands in this material are found. The capture coefficients for all the defects, except for the green luminescence (GL1) band, are independent of temperature. The electron-capture coefficient for the GL1 band significantly changes with temperature because the GL1 band is caused by an internal transition in the related defect, involving an excited state acting as a giant trap for electrons. By using the determined electron-capture coefficients, the concentration of free electrons can be found at different temperatures by a contactless method. A new classification system is suggested for defect-related PL bands in undoped GaN.

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mentioning

confidence: 91%

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Reshchikov

McNamara

Toporkov

et al. 2016

Sci Rep

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“…It is known that oxygen can diffuse from the sapphire substrate to GaN via structural defects and create a thin, degenerate layer near the GaN/sapphire interface (Look et al, 2001). It is also established that Si tends to accumulate at surfaces and subinterfaces (caused by growth interruption) in GaN grown by HVPE (Usikov et al, 2013).…”

Section: Growth Methods and Sims Analysismentioning

confidence: 99%

Point Defects in GaN

Reshchikov

2015

Semiconductors and Semimetals

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“…The growth process was performed in argon ambient with metallic Ga as a source material and hydrogen chloride and ammonia as active gases. The growth was performed at temperatures of 850-950°C that were somewhat lower than in a typical HVPE process of 1020-1050°C (Usikov et al, 2013;Sato et al, 2013;Fujito et al, 2009;Liu et al, 2014;Paskova et al, 2010) the growth rate was 0.2-1 µm/min and the total thickness of the layers was 10-20 µm. The growth was initiated at low growth rate and then continued with increased growth rate.…”

Section: Methodsmentioning

confidence: 99%

Deep Traps Spectra in Undoped Gan Films Grown by Hydride Vapor Phase Epitaxy Under Various Conditions

Polyakov¹,

Smirnov²,

Говорков³

et al. 2014

American Journal of Applied Sciences

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Decreasing the residual donors density and deep traps spectra densities in undoped GaN films grown by Hydride Vapor Phase Epitaxy (HVPE) is very important for promoting the use of such material in highvoltage/high-power rectifiers, radiation detectors. In this study we studied the effects of changing the growth temperature of undoped HVPE GaN films on these properties. The two groups of undoped GaN HVPE samples analyzed in this study were grown at growth temperature being either 850ºC or 950ºC. Measurements by means of Capacitance-Voltage (C-V) profiling, deep levels transient spectroscopy, Micro Cathode Luminescence (MCL) spectroscopy and imaging and by Electron Beam Induced Current (EBIC) showed a much lower density of residual donors (by almost two orders of magnitude), of deep electron traps and hole traps (by about an order of magnitude) and considerably (about 1.5 times) longer diffusion length of charge carriers in the films grown at 850ºC compared to samples prepared at 950ºC. The data obtained indicate that there is an optimal reduced growth temperature (close to 850ºC) resulting in lower concentration of shallow donors and deep traps while still preserving the high crystalline quality of the layer. This is of paramount importance for device applications of HVPE grown undoped GaN films.

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Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

Cited by 13 publications

References 23 publications

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Point Defects in GaN

Deep Traps Spectra in Undoped Gan Films Grown by Hydride Vapor Phase Epitaxy Under Various Conditions

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