Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

Pavlov, Yu. S.; Surma, A. M.; Лагов, П. Б.; Fomenko, Yu. L.; Geifman, E. M.

doi:10.1088/1742-6596/747/1/012085

Cited by 17 publications

(11 citation statements)

References 5 publications

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“…To modify the properties of nanopowders, we used a linear electron accelerator with an energy of 7 MeV, the same as in the previous studies 14–16 . The electron mean free path is about 12 mm both in silicon and aluminum.…”

Section: Methodsmentioning

confidence: 99%

“…To modify the properties of nanopowders, we used a linear electron accelerator with an energy of 7 MeV, the same as in the previous studies. [14][15][16] The electron mean free path is about 12 mm both in silicon and aluminum. If we take E d = 12.9 eV, then the maximum and average energies transferred to silicon atoms are about 3.5 keV and 75 eV, respectively.…”

Section: Irradiation: Procedures and Justificationmentioning

confidence: 99%

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Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties

Aslanov

Зайцев

Zakharov

et al. 2020

Surface & Interface Analysis

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Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5 mm average diameter. Optical characteristics (photoluminescence and infrared (IR) absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 7‐MeV electrons. The photoluminescence (PL) spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 1.2·1016 cm−2, mainly for NHC stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.

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Section: Methodsmentioning

confidence: 99%

Section: Irradiation: Procedures and Justificationmentioning

confidence: 99%

Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties

Aslanov

Зайцев

Zakharov

et al. 2020

Surface & Interface Analysis

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“…В отличие от термодиффузионных способов легирования примесями с глубокими уровнями (Au, Pt и др.) РТО позволяет обеспечить заданную концентрацию центров рекомбинации (ЦР) в кристалле ИМС [5,12,13] для снижения чувствительности к ОРЭ при одновременном сохранении комплекса электрических параметров в рамках норм технических условий.…”

Section: обоснование и выбор направления исследованийunclassified

Application of Radiation-Thermal Treatment to Suppress Sensitivity of Silicon Microcircuits to Single Radiation Effects

Лагов¹,

Drenin²,

Meshcheryakov³

et al. 2021

Rocket-space device engineering and information systems

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The paper analyses the possibility to reduce the sensitivity of silicon integrated circuits (ICs) to single radiation effects by means of radiation-thermal treatment including irradiation in charged particle accelerators and subsequent low-temperature heat treatment. It is shown that reduction in sensitivity to single radiation effects is provided by formation of thermostable recombination centers in semiconductor IC structure in necessary concentrations. At the same time a decrease in primary photocurrent generated by heavy charged particles or high-energy protons, reduction in transfer coefficients of parasitic bipolar transistors forming thyristor structures, reduction in carrier avalanche multiplication coefficients at high electric field strengths can be provided. Radiationthermal treatment can be introduced in the manufacturing process of ICs of various classes at the end of the manufacturing cycle and does not require correction of the basic technology. A possible undesirable growth of inverse currents and preservation of values of other electrical parameters within acceptable values when using radiation-thermal treatment is provided by choosing optimal modes of irradiation and annealing which are established in the course of experimental tests. The calculated evaluation has shown that using radiation-thermal treatment in the technology of IC fabrication can provide a decrease in the effective collection length of non-equilibrium charge carriers generated under the influence of single radiation effects by at least 10 times which allows considering radiation-thermal treatment as an effective technological tool to suppress the sensitivity to single radiation effects.

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“…Many silicon devices, including power MOSFET, IGBT, FRD etc. require applying technologies to control the lifetime of minor charge carriers [1,2]. As a result, one utilizes Au-or Ptthermodiffusion, radiation, and combined methods.…”

Section: Introductionmentioning

confidence: 99%

Laser ion source for semiconductor applications

Kulevoy

Losev

Alekseev

et al. 2022

J. Phys.: Conf. Ser.

Self Cite

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Carbon implantation can be effectively used for axial minority charge carriers’ lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centres are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source at Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO2 laser setup with radiation-flux density of 1011 W/cm2 at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.

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Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

Cited by 17 publications

References 5 publications

Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties

Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties

Application of Radiation-Thermal Treatment to Suppress Sensitivity of Silicon Microcircuits to Single Radiation Effects

Laser ion source for semiconductor applications

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