Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties

Aslanov, L. A.; Зайцев, В. Б.; Zakharov, V. N.; Kudryavtsev, I. K.; Senyavin, V. M.; Лагов, П. Б.; Pavlov, Yu. S.

doi:10.1002/sia.6836

Cited by 4 publications

(2 citation statements)

References 17 publications

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“…Weight measurements can easily estimate porosity, defined as the fraction of vacancy within the PSi layer. The porosity of the ZnPSi was determined using the gravimetric relation [26]:…”

Section: Morphology and Structure Of Znpsimentioning

confidence: 99%

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

et al. 2021

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Despite many dedicated efforts, the fabrication of high-quality ZnO-incorporated Zinc@Silicon (Zn@Si) core–shell quantum dots (ZnSiQDs) with customized properties remains challenging. In this study, we report a new record for the brightness enhancement of ZnSiQDs prepared via a unified top-down and bottom-up strategy. The top-down approach was used to produce ZnSiQDs with uniform sizes and shapes, followed by the bottom-up method for their re-growth. The influence of various NH4OH contents (15 to 25 µL) on the morphology and optical characteristics of ZnSiQDs was investigated. The ZnSiQDs were obtained from the electrochemically etched porous Si (PSi) with Zn inclusion (ZnPSi), followed by the electropolishing and sonication in acetone. EFTEM micrographs of the samples prepared without and with NH4OH revealed the existence of spherical ZnSiQDs with a mean diameter of 1.22 to 7.4 nm, respectively. The emission spectra of the ZnSiQDs (excited by 365 nm) exhibited bright blue, green, orange-yellow, and red luminescence, indicating the uniform morphology related to the strong quantum confinement ZnSiQDs. In addition, the absorption and emission of the ZnSiQDs prepared with NH4OH were enhanced by 198.8% and 132.6%, respectively. The bandgap of the ZnSiQDs conditioned without and with NH4OH was approximately 3.6 and 2.3 eV, respectively.

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“…Weight measurements can easily estimate porosity, defined as the fraction of vacancy within the PSi layer. The porosity of the ZnPSi was determined using the gravimetric relation [26]:…”

Section: Morphology and Structure Of Znpsimentioning

confidence: 99%

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

et al. 2021

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“…Experimental reference diode structures were obtained by forming a 3 µm junction in 10 µm epitaxial n-type layers, followed by vacuum deposition of the 1 µm anode Al-contact. The optimal carbon implantation energy range of 8.4-8.7 MeV and fluences of 1 • 10 12 − 4 • 10 12 cm −2 were selected using the SRIM [4] software package and real experience of previous radiation experiments with different particles and device structures [1,2,5,6,7]. All samples were subjected to rapid thermal annealing at a temperature of 425 shown in table 2.…”

Section: Irradiation Conditions and Resultsmentioning

confidence: 99%

Laser ion source for semiconductor applications

Kulevoy

Losev

Alekseev

et al. 2022

J. Phys.: Conf. Ser.

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Carbon implantation can be effectively used for axial minority charge carriers’ lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centres are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source at Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO2 laser setup with radiation-flux density of 1011 W/cm2 at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.

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Understanding the structure, bonding and reactions of nanocrystalline semiconductors: a novel high-resolution instrumental method of solid-state synchronous luminescence spectroscopy

Samokhvalov

2021

Phys. Chem. Chem. Phys.

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Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties

Cited by 4 publications

References 17 publications

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

Laser ion source for semiconductor applications

Understanding the structure, bonding and reactions of nanocrystalline semiconductors: a novel high-resolution instrumental method of solid-state synchronous luminescence spectroscopy

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