Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield

Nakano, Yoshiaki; Cao, Hongli; Tada, Kunio; Luo, Yi; Dobashi, M.; Hosomatsu, H.

doi:10.1143/jjap.32.825

Cited by 23 publications

(7 citation statements)

References 15 publications

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“…They show single mode behavior without any phase shift in the grating and without the need for sophisticated antireflection coatings. [17][18][19] Also a reduced frequency chirp is expected 20 as well as a higher side mode suppression and a reduced spatial hole burning effect 21,22 in comparison to an index coupled structure. Very important for optical communication systems is the back reflection sensitivity.…”

Section: Gain Coupled Dfb Lasersmentioning

confidence: 99%

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Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Focused ion beam implantation is a powerful technology for the fabrication of opto- and microelectronic devices. Optoelectronic devices like gain coupled distributed feedback lasers and nonabsorbing waveguides can be defined in semiconductor heterostructures by the band gap shift due to highly spatially resolved implantation induced thermal intermixing. Single mode emitting devices were fabricated with emission wavelengths of 1 and 1.55 μm in the material systems GaInAs/(Al)GaAs and GaInAsP/InP, respectively. Band gap shifts of more than 65 meV could be reached in GaInAsP quantum film structures which simplifies the integration of nonabsorbing waveguide sections with, e.g., lasers, modulators, and detectors. In highly doped semiconductor layers semi-insulating areas could be defined by focused ion implantation. Depletion lengths down to 50 nm can be controlled and were demonstrated on current injection restricted resonant tunneling devices. By using this technique collector-up heterobipolar transistors were fabricated which exhibit current amplification factors up to 45.

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Section: Gain Coupled Dfb Lasersmentioning

confidence: 99%

“…The technology used to fabricate these lasers up to now has been mainly based on lithography, etching of the active material, and overgrowth. Here the main problems of the processing include, e.g., the removal of contamination due to the lithography as well as overgrowth [1][2][3][4] …”

Section: Introductionmentioning

confidence: 99%

Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[5][6][7][8] The etching process can be used to modulate the thickness of absorptive layers 5,6 or of the active layers themselves. 7 Since the etching process creates a periodic modulation of the effective refractive index simultaneously with the gain grating, these devices are usually complex-coupled GC-DFB lasers.…”

Section: First Order Gain-coupled Gainas/gaas Distributed Feedback Lamentioning

confidence: 99%

First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

Orth

Reithmaier

Zeh

et al. 1996

Applied Physics Letters

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“…[1][2][3][4][5][6][7][8][9] We have previously reported on the theoretical analysis of inphase, second-order, surface-emitting CC-DFB lasers. 10 In this letter, we present a treatment of antiphase ͑i.e., excess gain preferentially placed in low-index regions͒, CC-DFB lasers.…”

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confidence: 99%

Metal-grating-outcoupled surface-emitting distributed feedback diode lasers

Kasraian

Botez

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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The theoretical analysis of antiphase, surface-emitting, complex-coupled, distributed feedback ͑SE-CC-DFB͒ lasers is presented. The specific configuration chosen for analysis is relatively simple: a metallic second order grating placed atop a diode-laser structure. This type of SE-CC-DFB structure can be fabricated by a lift-off and evaporation process; can operate in a single-lobed, orthonormal beam with a rather uniform near-field intensity pattern, and external differential quantum efficiency, d , values in excess of 30%. The dependence of the gain threshold on grating duty cycle for both the symmetric and antisymmetric ͑longitudinal͒ modes is presented and discussed. The external differential quantum efficiency for the symmetric mode is found to steadily increase with grating length at the expense of the degree of near-field-pattern uniformity. © 1996 American Institute of Physics. ͓S0003-6951͑96͒00345-2͔Complex-coupled, distributed-feedback ͑CC-DFB͒ edgeemitting lasers consisting of periodic variations of both the refractive index and gain have recently received considerable theoretical and experimental attention as potential light sources in advanced optical-communication systems.1-9 We have previously reported on the theoretical analysis of inphase, second-order, surface-emitting CC-DFB lasers.10 In this letter, we present a treatment of antiphase ͑i.e., excess gain preferentially placed in low-index regions͒, CC-DFB lasers. The device analyzed is simply composed of a metallic second-order Bragg grating placed atop a diode-laser structure. We show that an antiphase, surface-emitting ͑SE-CC-DFB͒ laser can provide a single-lobed, orthonormal far-field radiation profile as well as a symmetric, nearly uniform nearfield intensity pattern.While we have already demonstrated 10 that in-phase type SE-CC-DFB devices can fundamentally favor symmetric ͑i.e., single-lobe͒ mode operation, the designed structure involves a biharmonic-like grating, a feature impractical to fabricate and incorporate into a semiconductor-laser device. Therefore, knowing that resonant-optical-waveguide ͑ROW͒ arrays 11 are analogous to second-order antiphase, CC-DFB lasers, 12 we proceeded to analyze antiphase-type SE-CC-DFB's; which, as shown below, can be designed to be made in practical configurations. In particular, we choose to analyze a metal-grating second-order DFB, due to its simplicity of fabrication, and no need to process the semiconductor material itself. The latter feature is particularly attractive if one has to make GaN-based blue/green diode lasers. Metal-grating first-order, loss-coupled DFB lasers have already been demonstrated, 14 with excellent results ͑i.e., single-longitudinal-mode operation with good side-mode suppression ratio and no danger of self-pulsation, since light absorption in the metal is nonsaturatable͒. However, those devices were edge emitters. Here we present an analysis of a second-order metal-grating DFB laser that primarily acts to efficiently outcouple light in a direction orthornomal to the wafer pl...

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Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield

Cited by 23 publications

References 15 publications

Focused ion beam implantation for opto- and microelectronic devices

Focused ion beam implantation for opto- and microelectronic devices

First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

Metal-grating-outcoupled surface-emitting distributed feedback diode lasers

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