First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

Abstract

Articles you may be interested inDouble injection and negative resistance in stripegeometry oxideaperture Al y Ga1−y As-GaAs-In x Ga1−x As quantum well heterostructure laser diodes Firstorder gaincoupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth

990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect

“…Then, the chips on sub-mounts were mounted on copper heat sinks for water-cooling in further testing and analysis. Thus, our gain-coupled DFB laser device provides higher SLM output power than the narrow tripe SLM laser [24], narrower aperture width, which makes it easy for coupling and shaping, than high output power laser with MOPA structure [23], and easier fabrication technique than traditional DFB laser [20].…”

“…Ordinary gain-coupled DFB lasers based on periodic gain (or loss) and index-coupled DFB lasers with periodically changed refractive index suffer from different problems [12] due to their different structural characteristics as discussed in [13]. Solutions [14]- [18] to these problems are often accompanied by high-cost and time consuming complex fabrication technique [19] such as complicated epitaxial regrowth technology or delicate nanometer-scale gratings fabrication technology [20]. Meanwhile, DFB lasers with mode-selection gratings filtering unwanted lasing modes often result in low power [21].…”

Focused ion beam implantation for opto- and microelectronic devices

“…4 room temperature single mode emission spectra from broad area lasers ͑15 m stripe width and 800 m resonator length͒ were shown for different grating periods varying from 136 to 144 nm. 8 All these devices were defined on the same sample and demonstrate the proposed high single mode yield by using gain coupled gratings. 23 For future high speed wavelength division multiplexing optical communications systems lasers with well controlled emission wavelengths are important.…”

Realization of temperature-insensitive energy band-gap based on nanowire-well quantum systems for thermally frequency-stable laser diodes

“…Benefiting from frequency-stable and spectrally pure laser outputs, InGaAs-based quantum-confined lasers have attracted widespread attention over the past decade. 4,[10][11][12][13][14] However, the realization of frequency stability in practical applications is generally difficult, as it is subject to interference from other factors, especially temperature. For instance, as a pumping laser source for erbium-doped fiber amplifiers and lasers [10][11][12] or a distributedfeedback (DFB) laser used in optical communications, 13,14 a frequency-stable InGaAs laser is required to achieve simultaneous high power output, which undoubtedly poses a realistic challenge due to the thermal effect being aggravated for high-power devices, in turn seriously affecting the frequency stability.…”