Absorption loss coefficient of the active layer for 1.48-μm bulk and MQW lasers

Kakimoto, S.; Watanabe, Hitoshi

doi:10.1109/3.655014

Cited by 8 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Fig. 2 *m0 = 9.11 × 10 -31 Kg, mass of free electron calculated results with τ in = 0.2 ps are nearly close to reported data measured at τ in = 0.11 ps (6) compared with the other values of intraband relaxation time. Therefore τ in = 0.2 ps may be the experimentally possible value of intraband relaxation time.…”

Section: With Various Intraband Relaxation Times At 300 Ksupporting

confidence: 85%

“…Absorption loss coefficient (α) has been calculated with various intraband relaxation time for InGaAsP material and the calculated results indicate that α in InGaAsP material is larger than that of measured data reported (6) , whereas α is little larger than that of calculated data reported (7) as shown in Table 2. In Fig.…”

Section: With Various Intraband Relaxation Times At 300 Kmentioning

confidence: 84%

“…Kakimoto and Watanabe reported the measured and calculated value of the intervalence band absorption loss coefficient of active layer for bulk InGaAsP LDs in the range of 1.2~1.55 µm. They suggested the measured dependence of loss coefficient on lasing wavelength as well as small dependence on temperature (6) (7) . Intraband relaxation time, τ in is an important parameter for calculating absorption loss coefficient and it is found that τ in affects significantly on absorption loss, which is expressed by a function of injection (8) .…”

Section: Introductionmentioning

confidence: 96%

“…We also calculated the gain spectra for InGaAsP at 3 × 10 18 cm -3 of 1.55 µm with τ in = 0.11 ps. Next we have calculated intervalence band loss by taking into account of the effect of τ in as well as temperature in the range 1.2~1.6 µm by using density matrix theory (7) and compared with those reported (6) (7) . Calculated results show that the intraband relaxation time and temperature influenced the absorption loss coefficient of active layer for both LDs at the same wavelength region.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The Temperature Dependence of Threshold Current and Efficiency of AlGaInAs and InGaAsP Lasers Related to Intervalence Band Absorption Loss

2011

View full text Add to dashboard Cite

The intervalence band absorption loss coefficient of active layer in semiconductor laser diodes operating at long wavelengths have been calculated for Al 0.012 Ga 0.458 In 0.53 As and In 0.53 Ga 0.47 As 0.77 P 0.23 material with various hole density by taking into account of intraband relaxation time of 0.1 ps and 0.2 ps at 300 K and 400 K as parameters. Calculated results show that the loss and its temperature dependence of InGaAsP are larger than those of AlGaInAs material. The calculated intervalence band loss for InGaAsP is compared with the calculated data reported. The dependence of threshold current and quantum efficiency for both materials on intraband relaxation time as well as on the temperature in the wavelength range of 1.29~1.6 µm have been calculated by using the density matrix theory. It obtained that AlGaInAs devices are superior in temperature performance to InGaAsP because T 0 value for the former is higher (109 K) than that of the latter (85 K).

show abstract

Section: With Various Intraband Relaxation Times At 300 Ksupporting

confidence: 85%

Section: With Various Intraband Relaxation Times At 300 Kmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Temperature Dependence of Threshold Current and Efficiency of AlGaInAs and InGaAsP Lasers Related to Intervalence Band Absorption Loss

2011

View full text Add to dashboard Cite

show abstract

Intervalence band absorption loss coefficients of the active layer for InGaAs/InGaAsP multiple quantum well laser diodes

Kakimoto

2002

Journal of Applied Physics

View full text Add to dashboard Cite

We have calculated the intervalence band absorption loss coefficients of the active layer for InGaAs/InGaAsP multiple quantum well laser diodes and InGaAsP bulk laser diodes. The calculated intervalence band absorption loss coefficients of the active layer for the multiple quantum well laser diodes are smaller than those for the bulk laser diodes at the same lasing wavelength, which coincides with the experimental data reported.

show abstract

Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes

Kakimoto

Takagi

Watanabe

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

We investigate threshold currents (Ith’s) of 1.55 μm InGaAs/InGaAsP multiple quantum well (MQW) distributed feedback (DFB) laser diodes (LDs) experimentally and theoretically. The measured Ith of the 1.55 μm MQW LD with barriers whose band gap energy corresponds to 1.3 μm (λg=1.3 μm) is 10 mA, which nearly agrees with the calculated value of 8.5 mA. However, the measured Ith of the 1.55 μm MQW LD with barriers (λg=1.15 μm) is 19 mA, which is much larger than the calculated value. We explain this discrepancy by a nonuniform distribution of injected holes among the wells. The separation, ΔEv1, between the first quantized level of hole for the well valence band and the top energy for the barrier valence band prevents a uniform distribution of holes among the wells. The re-evaluated Ith, taking into account ΔEv1, is 18.8 mA which agrees well with the measured one. We also show that 1.55 μm p-type doped MQW DFB LD with barrier (λg=1.15 μm) is 5.4 mA, which is comparable to Ith’s of 1.55 μm strained MQW DFB LDs.

show abstract

Absorption loss coefficient of the active layer for 1.48-μm bulk and MQW lasers

Cited by 8 publications

References 8 publications

The Temperature Dependence of Threshold Current and Efficiency of AlGaInAs and InGaAsP Lasers Related to Intervalence Band Absorption Loss

The Temperature Dependence of Threshold Current and Efficiency of AlGaInAs and InGaAsP Lasers Related to Intervalence Band Absorption Loss

Intervalence band absorption loss coefficients of the active layer for InGaAs/InGaAsP multiple quantum well laser diodes

Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes

Contact Info

Product

Resources

About