The excitonic electroabsorption has been investigated for a high-purity GaAs epilayer of 10 µm thickness at room temperature and clear redshift (≃1.44 nm) of the excitonic absorption peak has been observed. An extinction ratio over 10 dB has been obtained with an applied voltage of 11 V, which is nearly five times larger than the theoretical estimation without considering the exciton. This may be the first observation for of a surface normal structure with a polyaniline as a transparent Schottky electrode. The insertion loss is estimated to be 3 dB. This relative low driving voltage for a bulk configuration without quantum wells is due to high-purity GaAs.
The absorption spectrum in high-purity GaAs has been theoretically studied in the presence of electric field taking into account of excitonic transition and continuum band transition at room temperature. We have calculated the Stark shift, height of exciton peak, linewidth broadening of exciton, extinction ratio as a function of electric field. We also have compared these results with the experimental results and found the close agreement with experimental.
We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.
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