Dependence of threshold current density on quantum well composition for compressive strained-layer Al&lt;inf&gt;x&lt;/inf&gt;Ga&lt;inf&gt;y&lt;/inf&gt;In&lt;inf&gt;1&amp;#x2212;x&amp;#x2212;y&lt;/inf&gt;As lasers

Sapkota, Durga Prasad; Kayastha, Madhu Sudan; Wakita, Koichi

doi:10.1109/iciprm.2010.5516084

Cited by 1 publication

(1 citation statement)

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“…It turns out the compressive strain level that can be used in the quantum wells is limited by the requirement to maintain a sufficiently low effective index mismatch with the passive waveguide. The introduction of compressive strain leads to an increase in the transverse electric (TE) gain which is beneficial for achieving lower threshold current levels [23], [24] in lasers and improves high temperature performance [8]. The compressive strain removes the degeneracy in the valence sub-bands at the Γ point.…”

Section: Active Layer Stack Designmentioning

confidence: 99%

1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology

Hazan

Andreou²,

Pustakhod

et al. 2022

IEEE Photonics J.

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In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers and passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate and optimized for butt-joint reflections is investigated. Material performance were assessed from measurements of broad area lasers. Room temperature operation reveals 1.2 W single facet output power with threshold current around 100 A/cm 2 per well. Characteristic temperatures of T0=75 K and T1=294 K were obtained. A compact model description of the SOA, suitable for the design of PICs and rate equation analysis, was applied to parametrize the unsaturated gain measurements. Current injection efficiency of 0.65, transparency carrier density of 0.57 10 18 cm -3 , and free carrier absorption losses up to 15 cm -1 were extracted from fitting the data. The model is verified with measurements of optical gain saturation. A modal gain of 15 dB for a 600 µm long narrow ridge SOA leads to output saturation power higher than 30 mW at 7 kA/cm 2 . This building block contributes to the development of an InP monolithic integration technology in the 1300 nm range, which can enable the use of photonic integrated circuits in many kind of applications.

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Section: Active Layer Stack Designmentioning

confidence: 99%