Abstract:The intervalence band absorption loss coefficient of active layer in semiconductor laser diodes operating at long wavelengths have been calculated for Al 0.012 Ga 0.458 In 0.53 As and In 0.53 Ga 0.47 As 0.77 P 0.23 material with various hole density by taking into account of intraband relaxation time of 0.1 ps and 0.2 ps at 300 K and 400 K as parameters. Calculated results show that the loss and its temperature dependence of InGaAsP are larger than those of AlGaInAs material. The calculated intervalence band l… Show more
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