Absolute Lattice-Parameter Measurement

Fewster, Paul F.; Andrew, N. L.

doi:10.1107/s002188989500269x

Cited by 172 publications

(89 citation statements)

References 20 publications

(14 reference statements)

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“…Измерение параметров решетки (ПР) a и c проводилось методом ТКД с использованием симметричного 0004 и асимметричного 11−24 рефлек-сов [8]. Путем регистрации на ДКД смещения ди-фракционного пика (0006) от сапфировой подложки при последовательном линейном сканировании образца в рентгеновском пучке измерялся радиус изгиба R, который давал информацию о латеральных биаксиаль-ных напряжениях сжатия σ a (R < 0) или растяжения (R > 0) [9].…”

Section: экспериментальная частьunclassified

Изменение характера биаксиальных напряжений при возрастании x от 0 до 0.7 в слоях Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N:Si, полученных методом аммиачной молекулярно-лучевой эпитаксии

Ратников¹,

Shcheglov²,

Бер³

et al. 2018

Физика И Техника Полупроводников

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The deformation mode and defect structure of Al_ x Ga_1 – x N:Si epitaxial layers ( x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 10^19 cm^–3. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 10^10 and 8.2 × 10^10 cm^–2, respectively.

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Section: экспериментальная частьunclassified

Изменение характера биаксиальных напряжений при возрастании x от 0 до 0.7 в слоях Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N:Si, полученных методом аммиачной молекулярно-лучевой эпитаксии

Ратников¹,

Shcheglov²,

Бер³

et al. 2018

Физика И Техника Полупроводников

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“…The study was supplemented with a precious measurement of lattice parameters after [12]. Afterwards, more sensitive techniques to distortions of a crystal lattice based on the interference X-ray diffraction effects were attractedsection Lang method and X-ray diffractometry under conditions of the Borrmann effect.…”

Section: Studied Samples and Methods Of Researchmentioning

confidence: 99%

X-ray study of dopant state in highly doped semiconductor single crystals

pina

Kyutt²,

Ратников³

et al. 2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state -whether it is in the crystals in the form of solid solution or under various stages of its decomposition -are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements.

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“…Using more sophisticated methods this precision can be further improved by about one order [116,117]. With such high precision, it is possible to study the effect of doping and stoichiometry on the lattice parameters.…”

Section: Lattice Parameters and Strainmentioning

confidence: 99%

“…In wurtzite crystal structures the lattice spacing d hkl between two adjacent planes (hkl), is given by [116,117]: …”

Section: Lattice Parameters and Strainmentioning

confidence: 99%

Doping of high-Al-content AlGaN grown by MOCVD

Nilsson¹

2014

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The high-Al-content Al x Ga 1-x N, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. The development of the deep-ultraviolet light-emitting diodes (DUV LEDs) is driven by the social and market impact expected from their implementation in portable units for water/surface disinfection and based on the damaging effect of the deep-ultraviolet radiation on the DNA of various microorganisms. Internationally, intense research and technology developments occur in the past few years, yet, the external quantum efficiency of the DUV LEDs is typically below 1%.One of the main material issues in the development of the DUV LEDs is the achievement of n-and ptype high-Al-content Al x Ga 1-x N layers with low resistivity, which is required for the electrical pumping of the diodes. The doping process becomes significantly more complex with increasing the Al content and the electrical resistivity is as high as 10 1 -10 2 Ω . cm for n-type AlN doped by silicon, and 10 7 -10 8 Ω cm for p-type AlN doped by magnesium.The present study was therefore focused on gaining a better understanding of the constraints in the doping process of the high-Al-content Al x Ga 1-x N alloys, involving mainly silicon. For this purpose, the epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN by implementing the distinct hot-wall MOCVD was developed in order to achieve layers of good structural and morphological properties, and with low content of residual impurities, particularly oxygen and carbon. Substitutional point defects O N and C N may have a profound impact on the doping by their involvement in effects of ntype carrier compensation. The process temperature was varied between 1000 and up to 1400 °C, which is a principal advantage in order to optimize the material properties of the high-Al-content Al x Ga 1-x N and AlN. The epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN was largely performed on 4H-SiC substrates motivated by (i) the lattice mismatch of ~ 1% along the basal plane (the smallest among other available substrates including Si and sapphire), (ii) the good thermal conductivity of 3.7 W cm -1 K -1 , which is essential to minimize the self-heating during the operation of any light-emitting diode, and (iii) the limited access to true-bulk AlN wafers. The outcome of this study is accordingly summarized and presents our understanding for (i) the complex impact of silicon and oxygen on the n-type conductivity of Al 0.77 Ga 0.23 N, representative for the alloy composition at which a drastic reduction of the n-type conductivity of Al x Ga 1-x N is commonly reported (paper 1); (ii) the strain and morphology compliance during the intentional iv doping by silicon and magnesium, and its correlation with the resistivity of highly doped layers of Al 0.82 Ga 0.18 N alloy composition (paper2); (iii) the n-type conductivity of highly Si-doped Al 0.72 Ga 0.28 N as bound by the process temperature (p...

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Absolute Lattice-Parameter Measurement

Cited by 172 publications

References 20 publications

X-ray study of dopant state in highly doped semiconductor single crystals

Doping of high-Al-content AlGaN grown by MOCVD

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