Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures

Callen, Olivier; Mosser, V.

doi:10.1016/s0921-5107(00)00636-x

Cited by 4 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Finally, the surface of the Hall structure is stabilized by coating it with a plasma enhanced chemical vapor deposited SiO 2 passivation layer. Constant Fermi-level transient spectroscopy 14 has revealed that GaAs/ SiO 2 interface states exhibit a U-shaped density of states with a minimum of ϳ3 ϫ 10 12 cm −2 / eV. At a sufficiently high temperature, the interface states are in thermal equilibrium with the electrons in the quantum well resulting in Fermi-level pinning around midgap and yielding highly reproducible sensitivity and temperature coefficients.…”

mentioning

confidence: 99%

Second-generation quantum-well sensors for room-temperature scanning Hall probe microscopy

Pross

Crisan

Bending

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

Scanning Hall probe microscopy is a noninvasive magnetic imaging technique with potential for having a major impact in the data storage industry if high-resolution Hall effect sensors can be developed with sufficiently low-noise figures at room temperature. To meet this requirement, we have developed a series of second-generation quantum-well Hall probes whereby the careful design of an AlGaAs∕InGaAs∕GaAs pseudomorphic heterostructure, chip layout, metal interconnects, and passivation layers has allowed a dramatic reduction of low-frequency noise sources. In addition, the Johnson noise-limited minimum detectable fields of these sensors are more than an order of magnitude lower than those used in early microscopes. The key figures-of-merit of the sensors are presented and their performance illustrated in an imaging study of a yttrium–iron–garnet thin film at room temperature.

show abstract

mentioning

confidence: 99%