Studies of GaAs metal–insulator–semiconductor structures by the admittance spectroscopy method

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

“…Moreover, the dependence of the capacitance and the conductance on the frequency f, caused by recharging of the defects with deep levels in the band gap E g , may be taken into account (as it was done by the authors of Refs. [44][45][46][47] when studying metal-insulator-semiconductor structures), with the help of the so called constant phase element (CPE). The admittance Y of the constant phase element by definition [48] depends on the angular frequency x = 2pf as…”

“…9 was made for frequencies ranging from 20 Hz to 2 MHz according to the complex nonlinear least squares method (CNLS) [47,48] by minimizing the dimensionless function Fig. 7.…”

The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures

“…For analysis of MIS-GaAs systems it was proposed for the first time in the paper [25], wherein the authors attributed the CPE (with n = 0.53-0.57) to complex electron processes evoked by insulator-semiconductor interface states and calculated their time constants. A similar approach was applied in their later works as well [26][27][28]. It has been shown that impedance spectroscopy is a relatively simple as compared with other methods which employed very complex formulae to analyze experimental characteristics [29].…”