Second-generation quantum-well sensors for room-temperature scanning Hall probe microscopy

Pross, A.; Crisan, A.; Bending, Simon; Mosser, V.; Kończykowski, M.

doi:10.1063/1.1887828

Cited by 19 publications

(17 citation statements)

References 16 publications

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“…[255] This technique has been applied to several problems in the area of superconductivity for the characterization of thin films. [256] Many microscale methods can be used to study different materials phenomena. In a similar way that SKEM and SHPM can be applied to the study of the magnetic properties of thin films, microscale thermal conductivity measurements can give new insights into order-disorder transformations and crystallographic site preferences in intermetallic compounds, the effect of solid-solution formation on conductivity, and compositional point defect propensity.…”

Section: Angewandte Chemiementioning

confidence: 99%

Combinatorial and High‐Throughput Materials Science

2007

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There is increasing acceptance of high-throughput technologies for the discovery, development, and optimization of materials and catalysts in industry. Over the years, the relative synchronous development of technologies for parallel synthesis and characterization has been accompanied by developments in associated software and information technologies. This Review aims to provide a comprehensive overview on the state of the art of the field by selected examples. Technologies developed to aid research on complex materials are covered as well as databases, design of experiment, data-mining technologies, modeling approaches, and evolutionary strategies for development. Different methods for parallel synthesis provide single sample libraries, gradient libraries for electronic or optical materials, similar to polymers and catalysts, and products produced through formulation strategies. Many examples illustrate the variety of isolated solutions and document the barely recognized variety of new methods for the synthesis and analysis of almost any material. The Review ends with a summary of success stories and statements on still-present problems and future tasks.

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Section: Angewandte Chemiementioning

confidence: 99%

Combinatorial and High‐Throughput Materials Science

2007

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“…When the sample is near the end of a measuring tip, its tilting can displace the sensor by hundreds of nanometers, being this the limiting factor of the resolution [38]. However, careful design of the sensor in recent systems claimed a minimum detection size of 80 nm [39].…”

Section: Hall-effect Sensorsmentioning

confidence: 98%

Magnetoresistive Sensors for Surface Scanning

Leitao¹,

Borme

Orozco

et al. 2013

Giant Magnetoresistance (GMR) Sensors

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Abstract. This chapter provides an overview on several techniques used for surface imaging, including SQUIDs, Hall-effect sensors, Giant magnetoimpedance sensors, and magnetoresistive (MR) sensors. Among all magnetic field sensors, only SQUIDs and MR devices have the potential to localize buried and non-visual field sources (such as defects in integrated circuits or magnetic field sources in biological environments. In particular, we describe how MR sensors have been used with advantage for integrated circuit (IC) mapping, with resolution below 500 nm and sensitivity to detect currents as low as 50 nA and have been used for many applications requiring low magnetic field detection. Challenges and experimental considerations on integration of MR sensors on a commercial analysis tool are provided here. Examples obtained with real devices demonstrate how Scanning Magnetic Microscopy has become an established failure analysis technique for visualizing current paths in microelectronic devices.

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“…This condition may not be satisfied for Hall devices made of materials with strong GR noise which may be comparable or even exceed the 1 / f noise within some frequency range ͑for example, in InGaAs quantum wells 25,27 ͒. ͑8͒ gives the field resolution in the limit of negligible GR noise.…”

Section: A Magnetic Field Resolution and Electronic Noisementioning

confidence: 99%

InAs quantum well Hall devices for room-temperature detection of single magnetic biomolecular labels

Mihajlović

Xiong

Molnár

et al. 2007

Journal of Applied Physics

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Articles you may be interested inDetection of magnetically labeled DNA using pseudomorphic AlGaAs ∕ InGaAs ∕ GaAs heterostructure micro-Hall biosensors J. Appl. Phys. 99, 08P103 (2006); 10.1063/1.2162041Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells Hall sensors with cross width of ϳ1 m were fabricated from InAs/ AlSb quantum well semiconductor heterostructures containing two-dimensional electron gas. The room-temperature device characteristics were examined by Hall effect and electronic noise measurements along with analytical calculations. In the low-frequency range, from 20 Hz to 1.6 kHz, the noise-equivalent magnetic field resolution was found to be limited by 1 / f and generation-recombination noise from 22 to 3.5 T/ ͱ Hz. The corresponding noise-equivalent magnetic moment resolution reached 10 6 B / ͱ Hz at ϳ700 Hz and was even lower at higher frequencies. Using a phase-sensitive measurement technique, detection of a single 1.2 m diameter bead, suitable for biological applications, was achieved with a signal to noise ratio of ϳ33.3 dB, as well as detection of six 250 nm beads with a signal to noise of ϳ2.3 dB per bead. The work demonstrates the efficacy of InAs quantum well Hall devices for application in high sensitivity detection of single magnetic biomolecular labels.

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Second-generation quantum-well sensors for room-temperature scanning Hall probe microscopy

Cited by 19 publications

References 16 publications

Combinatorial and High‐Throughput Materials Science

Combinatorial and High‐Throughput Materials Science

Magnetoresistive Sensors for Surface Scanning

InAs quantum well Hall devices for room-temperature detection of single magnetic biomolecular labels

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