Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiN<sub>x</sub>Interlayer Dielectric in Top Gate a-InGaZnO Transistors

Chen, Guan-Fu; Chang, Ting‐Chang; Chen, Hua-Mao; Chen, Bo-Wei; Chen, Hong-Chih; Li, Cheng-Ya; Tai, Ya‐Hsiang; Hung, Yu-Ju; Chang, Kang-Ming; Cheng, Kai-Chung; Huang, Chihpin; Chen, Kuo-Kuang; Lu, Hsueh‐Hsing; Lin, Yu‐Hsin

doi:10.1109/led.2017.2657546

Cited by 20 publications

(6 citation statements)

References 18 publications

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“…5,8,13) In TAOS-TFTs, many researchers predicted the existence of hot carriers as one of the degradation models of device reliability from transfer characteristics and capacitancevoltage (C-V ) characteristics. [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] However, it is a discussion point as to whether the generation of hot carriers is possible or not because TAOS such as IGZO have an amorphous structure and exhibit relatively low mobility of around 10 cm 2 V −1 s −1 compared with poly-Si or sc-Si. When hot carriers are generated in TAOS-TFTs, photon emission should be observed.…”

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confidence: 99%

Hot carrier effects in InGaZnO thin-film transistor

Takahashi

Miyanaga

Fujii

et al. 2019

Appl. Phys. Express

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Photon emission and the electrical characteristics of a InGaZnO (IGZO) thin-film transistor (TFT) were evaluated to clarify the existence of hot carriers and their effects. The photon emission was observed from the drain edge of the IGZO-TFT and the capacitance–voltage characteristics indicated that a potential barrier was formed at the drain region when the device is driven by high drain voltage of 30 V. Based on these results, the photon emission phenomenon from the IGZO-TFT was induced by hot carriers that should be considered as a significant degradation mode for a high-performance oxide semiconductor device.

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confidence: 99%

Hot carrier effects in InGaZnO thin-film transistor

Takahashi

Miyanaga

Fujii

et al. 2019

Appl. Phys. Express

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“…Hydrogen diffusing into the a-IGZO channel first passivates the defect, then excess hydrogen as donors can increase electron density [28]. When the sufficient hydrogen in a-IGZO acts as shallow donors, it can raise the Fermi level (E F ) of a-IGZO [29], [30]. There are more carriers in a-IGZO:H, lowering the effective barrier height in the conduction path [29], [31].…”

Section: Resultsmentioning

confidence: 99%

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

Lee

Chiu

et al. 2022

IEEE J. Electron Devices Soc.

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The mobility enhancement and the positive bias stress of top-gate self-aligned TFTs using the a-IGZO channel with a front barrier are investigated. The a-IGZO front barrier can keep electrons in the a-IGZO channel away from the top-gate oxide to significantly enhance the electron mobility at the top gate operation. The parasitic channel induces a hump in the transfer characteristics. The positive bias stress shifts the hump to the negative voltage abnormally. The H 2 O in the polymer film on array layer is responsible for the abnormal shift. The H 2 O diffuses into the top-gate insulator and is electrolyzed to create H + , which forms a parasitic channel with a negative shift of threshold voltage, leading to the abnormal hump. The abnormal humps are increasingly significant with the increasing channel width and the decreasing channel length. The channel width dependence on positive bias stress is due to the inverse narrow width effect caused by the fringe electric field. The channel length dependence on positive bias stress is due to the H + diffusion toward the center of the parasitic channel from both the source and drain sides.INDEX TERMS Positive bias stress (PBS), a-IGZO, hump, polymer film on array (PFA).

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“…In industry, the metal oxide composition material InGaZnO 4 (IGZO) was originally proposed for display applications . Due to its high transparency, uniformity, and mobility, IGZO has significant attention for various applications and their related TFT reliability issues . In addition, IGZO has a WBG characteristic of 3.1–3.4 eV, depending on the composition ratio .…”

Section: Comparisons Of the Features Of Many Other Uv Sensing Devicesmentioning

confidence: 99%

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

Chen

Tsao

Chien

et al. 2019

Adv Materials Technologies

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produces some real risks, including wrinkles, pigmented flat spots known as liver spots, and even skin cancer. [1][2][3][4] These are mostly attributed to the effects of UV light, a shorter wavelength than the visual spectrum. Therefore, over the past decades, developments in UV sensors have received significant attention for their potential positive effects on human health.When considering the performance of many different UV sensors, required features include high sensitivity, stability, and linearity. Most importantly, a compact design compatible with current device fabrication process is key for low-cost production. [5,6] Previous studies mostly focused on a two terminal photodiode device based on wide bandgap (WBG) semiconductor materials such as TiO 2 , SiC, and ZnO materials. [7][8][9] Later, some III-V compounds, such as gallium nitride (GaN), also received attention as UV photodetector materials. [10,11] Some metal-semiconductor-metal (MSM) structures have also been proposed to simplify device fabrication processes. [7][8][9][10][11][12] Although such WBG-based UV sensors have the advantages of a simple structure and high intrinsic visible-blindness; numinous drawbacks such as poor crystal quality or high activation energy of dopants have slowed developments. In addition, UV-sensing devices have received significant recent attention for applications in areas such as human health, fire detection, and optical communication.One key factor for product commercialization is determining the optimal materials that allow for integration of excellent UV-sensing properties with compatibility with industrial fabrication processes. However, current UV sensors often fail to achieve this due to either mismatched materials or a device that must be excessively large in order to produce enough photocurrent for UV detection. The UV-light-sensing properties of an amorphous InGaZnO 4 (IGZO) thin-film transistor with a dual-gate structure and relatively small device size (width/length = 50 μm/10 μm) that achieves high sensitivity through a threshold-voltage-(V th )-adjustment method is proposed. Comparing the drain currents under UV exposure to those under darkened conditions indicates that the ratio between the photoinduced and dark current reaches 10 6 . Furthermore, the UV sensitivity of the dual-gate transistors can be adjusted by varying the bottom gate voltage, with each pixel of the sensor then being read out separately via scan line pulses. This allows the dual-gate a-IGZO transistor to be used for high-performance UV sensing while being effectively integrated in display applications. SensorsAlmost all living things on Earth rely on the sun for nutrition and survival, whether directly or indirectly. The sun provides radiant heat, and gives energy to plants for the photosynthesis process, thus providing basic needs and food for creatures and humans. However, exposure to the sun for human beings also

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Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiN_xInterlayer Dielectric in Top Gate a-InGaZnO Transistors

Cited by 20 publications

References 18 publications

Hot carrier effects in InGaZnO thin-film transistor

Hot carrier effects in InGaZnO thin-film transistor

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

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Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNxInterlayer Dielectric in Top Gate a-InGaZnO Transistors

Cited by 20 publications

References 18 publications

Hot carrier effects in InGaZnO thin-film transistor

Hot carrier effects in InGaZnO thin-film transistor

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

A Dual‐Gate InGaZnO4‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

Contact Info

Product

Resources

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Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiN_xInterlayer Dielectric in Top Gate a-InGaZnO Transistors

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection