Ablation study on pulsed KrF laser annealed electroluminescent ZnS:Mn/Y2O3 multilayers deposited on Si

Synthesis and characterization of CdSe/ZnS core‐shell quantum dots immobilized on solid substrates through laser irradiation

“…This behavior is attributed to the low sublimation temperature of ZnS. According to theoretical calculations the laser intensity threshold value to reach the sublimation temperature of ZnS:Mn thin films under KrF*, 248 nm wavelength excimer laser irradiation is around 16.6 MW cm −2 , in agreement with the threshold determined experimentally, around 15 MW cm −2 32.…”

Pulsed laser annealing for high-efficiency thin film electroluminescent devices

“…We believe that this behavior is inherent to the allotropic transition itself due to the thermal energy used during the solid-state transformation ͑latent heat͒. In a previous ablation rate study, 7 we also suggested that when significant absorption of radiation is providing the latent heat of phase transformation, the surface temperature might be lowered as well. In Ref.…”

“…Based on the results of a thermal model that we described in a previous work, 7 Fig. 1 shows the calculated maximal transient temperatures attained at the phosphor ͑ZnS:Mn͒ layer surface and at the phosphor/insulator interface, as a function of incident laser power density.…”

“…Yet, due to the nonhomogeneous temperature profiles within the phosphor layer during pulsed KrF laser annealing ͑Fig. 2͒, 7,8 the phosphor crystallites at the interface are less heated than those in the bulk of the ZnS:Mn layer. Hence, for this particular exercise, the lattice constant of the nonlaser annealed ZnS:Mn structure ͑as-deposited͒ is used to calculate the lattice misfits of laser annealed samples.…”

A permanent optical storage medium exhibiting ultrahigh contrast, superior stability, and a broad working wavelength regime

“…After applying a single shot of KrF laser illumination, the metal film is transformed into metal NPs. [18][19][20] The illuminated area, therefore, presents many NPs on its surface, whereas the non-illuminated area remains as a thin metal film. During the subsequent chemical etching process, the metal NPs act as etching catalysts to form well-positioned, ordered 1D silicon nanostructures only on the areas in which the NPs had been distributed.…”