A Widely-Tunable High-SMSR Narrow-Linewidth Laser Heterogeneously Integrated on Silicon

Tran, Minh A.; Komljenović, Tin; Huang, Duanni; Liang, Linjun; Kennedy, M. J.; Bowers, John E.

doi:10.1364/cleo_at.2018.af1q.2

Cited by 9 publications

(5 citation statements)

References 7 publications

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“…The use of a single or of multiple ring resonators is a common practice in integrated ECL design for providing wavelength selectivity. Ring resonators can be interposed in the optical path between the chip interface and a reflective element [11], used directly as a wavelength selective reflector [19], or as part of a Sagnac loop [1], [7]- [10]. The use of multiple rings in Vernier configuration for wideband laser tuning [1], [7], [11] was also demonstrated for other wavelength ranges, e.g., in the O-band [8].…”

Section: B Vernier Structurementioning

confidence: 99%

“…A great deal of interest has been given to the implementation of ECLs with a combination of III-V gain materials with a silicon photonic integrated circuit (PIC), to supplement the silicon platform with light emission functionality. While heterogeneous III-V on silicon integration has been pursued as a means to achieve dense integration and tight, lithography driven alignment tolerances [7], [8], much interest has also been given to the integration of off-the-shelf semiconductor optical amplifiers (SOAs) with silicon photonics PICs. Hybrid integration schemes can rely on micro-lenses or other interposed micro-optics [9] or on direct grating assisted [10] or butt-coupling [11] between flip-chipped components.…”

Section: Introductionmentioning

confidence: 99%

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Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Ghannam

Shen

Merget

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quality-factor ring resonators arranged in Vernier configuration close a Sagnac loop between the two waveguides. In addition to wideband frequency tuning, they result in a longer effective cavity length. The alignment tolerant coupler increases the alignment tolerance in the two directions parallel to the chip surface by a factor 3 relative to conventional edge couplers, making it ideal for gain chip integration via pick-and-place technology. Lasing is maintained in a misalignment range of ±6 µm in the direction along the edge of the chip. A Lorentzian laser linewidth of 39 kHz is achieved.

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Section: B Vernier Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Ghannam

Shen

Merget

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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“…However, traditional tunable lasers have complex structures and high cost. In contrast, integrated wavelength-tuned lasers will be a better choice [28]- [30]. They are small in size, simple in structure and can be integrated with our device.…”

Section: Discussionmentioning

confidence: 99%

Integrated Wavelength Beam Emitter on Silicon for Two-Dimensional Optical Scanning

Cao

et al. 2019

IEEE Photonics J.

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A novel integrated on-chip wavelength-based beam emitter is proposed and fabricated to realize two-dimensional optical scanning. By combining both wavelength division filters and emission array, 80 × 8 far-field optical beam spots are achieved with a field of view of 6°× 4°. Both collimation and projection modes are tested and 64 wavelength channels are realized in 10 nm bandwidth from 1550 to 1560 nm. This device can be used for LIDAR, optical wireless communication, and high-speed infrared imaging applications.

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“…Some recent works have been focusing on heterogeneously integrated tunable laser sources for many applications, including integrated LiDAR [149]- [151]. The tuning of the emitted wavelength can be achieved by using microring resonators in a Vernier configuration, as shown in [149]- [150]. In [149], the authors demonstrated a laser tuning range of 46 nm (1527 nm-1573 nm), achieved by thermally tuning the Vernier rings, with up to 1.6 mW output lasing power.…”

Section: Light Source Integrationmentioning

confidence: 99%

A Review and Perspective on Optical Phased Array for Automotive LiDAR

Hsu

Solano-Rivas

et al. 2021

IEEE J. Select. Topics Quantum Electron.

170

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A Widely-Tunable High-SMSR Narrow-Linewidth Laser Heterogeneously Integrated on Silicon

Cited by 9 publications

References 7 publications

Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Integrated Wavelength Beam Emitter on Silicon for Two-Dimensional Optical Scanning

A Review and Perspective on Optical Phased Array for Automotive LiDAR

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