A wide band CMOS radio frequency RMS power detector with 42-dB dynamic range

Wang, Jiayi; Zheng, Yongan; Yang, Fan; Fan, Tie; Liao, Huailin

doi:10.1109/iscas.2015.7168974

Cited by 19 publications

(9 citation statements)

References 10 publications

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“…Diodes are key components in radio frequency (RF) communication systems, where they are used for several RF applications like signal rectification, power detection, and energy harvesting, just to cite few. [1][2][3][4][5] Thin-film technology based diodes such as metal-insulatormetal (MIM) diodes or 2-dimensional (2D) material based metal-insulator-graphene (MIG) diodes are attracting increasing research interests over the past years, due to their high performance and thin-film fabrication process on rigid or flexible substrate. [6][7][8][9][10][11][12][13][14][15][16] Moreover, MIG diodes are also used as building blocks to realize different circuits, such as mixers, power detectors, RF receivers etc.…”

Section: Introductionmentioning

confidence: 99%

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Wang

Uzlu

Shaygan

et al. 2019

ACS Appl. Electron. Mater.

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In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al 2 O 3 -encapsulated graphene with TiO 2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

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Section: Introductionmentioning

confidence: 99%

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Wang

Uzlu

Shaygan

et al. 2019

ACS Appl. Electron. Mater.

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“…Thus, the total target gain of the receiver varies from -32 dB to 40 dB. In order to realize AGC function, a root mean square (RMS) power detector [10,11] is applied in the design, which detects the amplitude of the IF signal and transforms it to a DC voltage. And then, the DC voltage can be switched to connect with the current source regulator Vctr which tunes the gain of VGA blocks dynamically.…”

Section: Agc Closed Loopmentioning

confidence: 99%

A novel AGC scheme in a wideband receiver

Huang

Lin

Zhou

et al. 2018

IEICE Electron. Express

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Abstract:A new automatic gain control (AGC) scheme in a wideband wireless receiver is presented in this paper. The proposed AGC scheme consists a receiver architecture with tuning the gain of RF amplifier, mixer and IF amplifier synchronously, and a novel exponential function current generator to achieve dB-linear gain control characteristic. Fabricated on a 0.18um BiCMOS process, the proposed receiver provides a conversion gain dynamic range of 72 dB with the gain ripple of 5 dB that range from 0.8 to 2.7 GHz. At maximum gain operation, the noise figure of 9.9 dB and -25 dBm of third-order input intercept point are measured at 2.7 GHz. The chip draws 27 mW from a 1.8 V power supply and occupies an area of 2.8 mm 2 . Keywords: automatic gain control (AGC), receiver, dB-linear, wideband Classification: Integrated circuits [11] J. Wang, Y. Zheng, F. Yang, F. Tian and H. Liao: "A wide band CMOS radio frequency RMS power detector with 42-dB dynamic Range," IEEE

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“…The power level is divided into several segments and each segment is detected separately. In [3], a capacitor attenuation array and seven stage CMOS rectifiers with auxiliary capacitors are utilized for a wide dynamic range PD. The attenuation capacitors reduce the input signal for rectifiers so the PD can detect input power precisely.…”

Section: Introductionmentioning

confidence: 99%

Compact Switched-Capacitor Power Detector With Frequency Compensation in 65-nm CMOS

Boon

et al. 2020

IEEE Access

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This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the power detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the power detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors' knowledge, it is the first power detector with input frequency compensation. The core of the power detector occupies an area of 0.014 mm 2 and consumes 2.04 mW static power. INDEX TERMS CMOS power detector, dynamic range, frequency compensation, self-biased MOSFET.

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A wide band CMOS radio frequency RMS power detector with 42-dB dynamic range

Cited by 19 publications

References 10 publications

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Flexible One-Dimensional Metal–Insulator–Graphene Diode

A novel AGC scheme in a wideband receiver

Compact Switched-Capacitor Power Detector With Frequency Compensation in 65-nm CMOS

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