A voltammetric study of the electrodeposition chemistry in the Cu + In + Se system

Mishra, Kamal K.; Rajeshwar, Krishnan

doi:10.1016/0022-0728(89)80082-8

Cited by 104 publications

(53 citation statements)

References 29 publications

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“…Complexing agents such as citric acid/citrate [50,51], thiocyanate [52], sodium sulfamate [53], sulfosalicylic acid [54], etc., were often used to improve the composition and morphology of the CIGS films. These additives form complexes with the metal ions in the solution such as Cu, thereby resulting in controlled deposition rates and hence the morphology [55,56]. Good quality CIGS thin films were also prepared from sulfate-citrate and chloride-citrate solutions [53,57,58] and control of the optical band gap by increasing the Ga content in the films was demonstrated [59].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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“…It is often assumed that the In(III) reduction results from a chemical reaction with Se(-II) species [14]. The formation of binary Cu-Se phases seems necessary to enable the incorporation of indium at a potential higher than its equilibrium potential [11][12][13][14][15]. It has been shown that in addition to the chalcopyrite phase, additional phases such as binary Cu-Se phases, elemental Se and possibly In-Se phases may form during the deposition [17].…”

mentioning

confidence: 98%

“…However most of the investigations on this system have focused mainly on the optimisation of the electrodeposition process, few studies have concerned the mechanism of the codeposition [4,5,[10][11][12][13][14][15]. To improve and monitor the properties of the CIS absorber, it is necessary to better understand the deposition mechanism.…”

mentioning

confidence: 99%

New insights in the electrodeposition mechanism of CuInSe² thin films for solar cell applications

Chassaing

Ramdani

Grand

et al. 2008

Phys. Status Solidi (c)

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The electrodeposition of CuInSe2, one of the most appropriate absorber for thin layer photovoltaic solar cells, is investigated with a rotating disc electrode by voltametry, steady‐state polarization and electrochemical impedance spectroscopy in dilute acidic solutions. Three main potential domains are distinguished. At low cathodic polarizations, binary Cu‐Se compounds are deposited. Indium starts to incorporate beyond a potential threshold which is associated with a current peak similar to a passivation peak and with impedance diagrams showing a negative polarisation resistance. For more negative potentials the impedance diagrams exhibit mainly characteristic features corresponding to charge transfer under diffusional control. A reaction path is proposed. These results are discussed in terms of general behavior of multinary compound deposition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Though Se is nobler than Cu, the formation of Se (IV) to Se (0) is sluggish, and hence, the initial formation of Cu is highly necessary for the direct reduction of Se(IV) [104]. During the initial stage of deposition, the formation of Cu nano-nuclei over the Mo substrates allows the incorporation of Se (0) to form Cu x Se binary phase.…”

Section: Electrochemical Formation Mechanism Of Cise/cigsementioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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A voltammetric study of the electrodeposition chemistry in the Cu + In + Se system

Cited by 104 publications

References 29 publications

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

New insights in the electrodeposition mechanism of CuInSe² thin films for solar cell applications

A short review on the advancements in electroplating of CuInGaSe2 thin films

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A voltammetric study of the electrodeposition chemistry in the Cu + In + Se system

Cited by 104 publications

References 29 publications

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

New insights in the electrodeposition mechanism of CuInSe2 thin films for solar cell applications

A short review on the advancements in electroplating of CuInGaSe2 thin films

Contact Info

Product

Resources

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New insights in the electrodeposition mechanism of CuInSe² thin films for solar cell applications