A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model

Shabanpour, R.; Meister, Tilo; Ishida, K.; Kheradmand‐Boroujeni, Bahman; Carta, Corrado; Ellinger, Frank; Petti, Luisa; Münzenrieder, Niko; Salvatore, Giovanni A.; Tröster, Gerhard

doi:10.1109/newcas.2017.8010122

Cited by 14 publications

(5 citation statements)

References 14 publications

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“…These models can also include noise level considerations, as in [137,138]. Typically, existing transistor models optimized for silicon devices, such as the Spice MOS-FET Level = 3 [139,140] and different versions of the Rensselaer Polytechnic Institute Amorphous Silicon TFT Model [130,131,141], are mostly used to model flexible metal oxide TFTs, by fitting them to measured device characteristics. The performance impact of the bending radius of a TFT is usually relatively small, and has been included in simulation models for circuit design [142].…”

Section: Flexible Metal Oxide Analog Circuitsmentioning

confidence: 99%

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Cantarella

Costa

Meister

et al. 2020

Flex. Print. Electron.

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Thanks to the extraordinary advances flexible electronics have experienced over the last decades, applications such as conformable active-matrix displays, ubiquitously integrated disposable flexible sensor nodes, wearable or textile-integrated systems, as well as imperceptible and transient implants are now reachable. To enable these applications, specialized analog circuits able to transmit and receive data, condition sensors' parameters, drive actuators or control powering devices are required. High-performance sensor conditioning, driving and transceiver circuits on a wide range of flexible substrates are therefore extremely important to develop. However, the currently available materials and processes compatible with mechanically flexible substrates impose massive limitations in terms of large-area uniformity, device dimensions' shrinkability and circuit design, challenging the realization of flexible analog systems. Among state-of-the-art technologies employing low-temperature fabrication processes, thin-film transistors (TFTs) based on metal oxide semiconductors represent the potentially best compromise in terms of prize, performance, technology maturity and capacity to realize complex systems. This is why metal oxide TFTs are nowadays widely used for flexible, light-weight, transparent, stretchable and bio-degradable analog circuits and systems. Here, we review the current trends of flexible metal oxide TFTs for analog applications. First, an introduction is given, where current challenges and requirements related to the realization of flexible analog circuits and systems are analysed. Additionally, TFT performance parameters and configurations are briefly revised. Then, the recent advances in the field of flexible metal oxide TFTs for analog applications are summarized. In particular, all reported approaches to reduce the channel length and improve the AC performance are shown. Next, the current state of flexible metal oxide TFT-based analog circuits is shown, discussing n-type only and complementary circuit configurations. The last topic of the review covers systems based on flexible metal oxide analog circuits. Finally, a conclusion is drawn and an outlook over the field is provided.

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Section: Flexible Metal Oxide Analog Circuitsmentioning

confidence: 99%

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Cantarella

Costa

Meister

et al. 2020

Flex. Print. Electron.

View full text Add to dashboard Cite

show abstract

“…The simulation and DOS model parameters of our proposed TFT are listed in Table II. The device model is based on the Rensselaer Polytechnic Institute amorphous IGZO (RPI-α-IGZO) model [32]. The device simulation parameters have been adapted from the author's previous findings [33], [34] for this work, and the compact model outlines have been applied in the Keysight Advance Design System (ADS 2015.01).…”

Section: Device Simulationmentioning

confidence: 99%

Design of Double-Gate Tri-Active Layer Channel Based IGZO Thin-Film Transistor for Improved Performance of Ultra-Low-Power RFID Rectifier

Dargar

Srivastava

2020

IEEE Access

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In a Radio Frequency Identification (RFID) circuit, the rectifier plays a vital role since it converts the received RF energy from a distant transmitter (reader) to power the entire RF circuit of the passive tag. The thin-film transistors have the potential to affect the rectifier circuit performance using the channel structural modification in the device to accomplish better gate-control for low-power operations. In this paper, the authors have presented a novel design of a double-gate amorphous In-Ga-Zn-O (IGZO) based thin-film transistor with a tri-active layer channel structure. Further, the experimental characterization of the device has been implemented using the SPICE model to analyze the device performance in the rectifier circuits. The simulation reports the competitive results with an improved rectifier performance using the proposed structure. The performance of ultra-low-power rectifier topologies has been compared with the conventional rectifier circuit. Among others, the differential rectifier circuit arrangement has a high power conversion efficiency of 20.06% for low input 0.45 V−0.61 V, whereas Self-V TH-Cancellation (SVC) configuration optimum power consumption is 0.14 μW. The promising results suggest the device deployment in the passive RFID tags and implantable devices in ultra-low-power integrated circuits.

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“…Fig. 4a shows the measured drain current versus gate-source voltage and compares it to the current predicted by a bespoke compact thin-film transistor model [20]. This model builds on the RPI-aTFT model (Rensselaer Polytechnic Institute model for amorphous silicon TFT) [21], which was improved over the standard model by adding equations and parameters to enhance the prediction accuracy for IGZO TFTs.…”

Section: Simulation and Circuit Designmentioning

confidence: 99%

Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs

Münzenrieder

Costa

Petti

et al. 2019

2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

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A unique requirement of flexible electronic systems is the need to simultaneously optimize their electrical and mechanical performance. Amorphous InGaZnO thin-film transistors (TFTs) fabricated on free-standing large-area plastic substrates address this issue by providing a carrier mobility >10 cm 2 /Vs, and bendability down to radii as small as 25 μm. At the same time, limitations such as a constrained minimum lateral feature size, the lack of appropriate p-type materials, or the influence of strain have to be considered when designing circuits. Here, models describing the scaling and bending behavior of flexible InGaZnO TFTs, together with the design of strain insensitive circuits operating at megahertz frequencies are presented.

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A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model

Cited by 14 publications

References 14 publications

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Design of Double-Gate Tri-Active Layer Channel Based IGZO Thin-Film Transistor for Improved Performance of Ultra-Low-Power RFID Rectifier

Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs

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