“…Among them, the amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) has attracted much attention because of its high mobility, simple preparation process, low cost, and good uniformity [1][2][3][4]. The a-IGZO TFT is very suitable for the large-scale circuit on board and has been Yingtao Xie, Kunlin Cai, Huan Jian, Yanlin Huang, and Wei Wang are all with the Department of Electronic Engineering, Chongqing University of Posts successfully applied in various directions, such as pixel circuits [5], logic circuits [6], radio-frequency (RF) identification [7], wearable flexible integrated devices [8], and flexible displays [9]. In addition, since external factors such as water vapor and oxygen can directly affect the performance of a-IGZO TFT, depositing SiOx passivation-layer above the channel by RF sputtering can effectively block the corrosive medium from penetrating the back-channel surface and enhance the stability of the device [10][11].…”