In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics, at different overlap and offset length between gate and Source-Drain (S-D) contacts. The resulted parameters have a better agreement to the device characteristics including high I ON /I OFF at offset of the thin-film transistor (TFT) of order 10 11 , high channel mobility is 16.08 cm 2 /V.s in overlap, while it is less than 6 cm 2 /V.s for the offset TFTs. The superior electrical behavior of the novel double-gate TAL TFT have been incorporated. Later on, the device application in a new Active Matrix –Organic Light Emitting Diode (AMOLED) pixel circuit has been proposed.

The microwaves of typical frequency ranges of 3 GHz to 30 GHz have been in use for remote sensing applications which are progressing rapidly. The microwaves can sense existing moisture in any material that absorbs moisture such as soil or vegetation. In case of soils which may be comprised of variable mix proportionate of solids, liquids or gases and distinct textures subjected to the associated size and the arrangements of soil particles. Hence, the moisture absorption by a specific type of soil used to be different. The inherent physical and electrical properties such as color, texture, grains, dielectric constant, conductivity or permeability, etc. differentiate various soils. In this work, authors present soil moisture measurement by simple estimation of emissivity i.e. the ratio of energy radiated by an object to absorbing the body of same physical temperature. A strategic method of measuring dielectric constant using a microwave signal is used in this research work. The measurement of the dielectric constant of the soils collected from the specific regions and analysis of results has been reported. The proposed method is less complex and can further be used for the identification of soil moisture and agricultural applications.

Among high-field mobility materials, amorphous indium-gallium-zinc oxide (In-Ga-ZnO) (α-IGZO) has been prominent for their use in thin-film transistors (TFTs). In this Letter, the authors present a novel structure of TFT with tri-active layer (TAL) channel consisting of α-IGZO and In-SnO (ITO) materials. Further, the simulation-based analysis of the proposed device and characteristics in comparison to the single and double active layer channel structures have been reported. This work also analyses the effect of front-back channel thickness-ratios in double-active layer channel TFTs. The proposed TAL channel TFT describes improved switching parameters such as lower threshold voltage (V TH) − 4.24 V, high field-effect mobility (µ FE) 38.4 cm 2 /V-s, moderate subthreshold swing 0.398 mV/decade, and reasonably high ONto OFF current ratio (I ON /I OFF) 0.18 × 10 12. The electrical characteristics persuade the significance of the proposed structure in next-generation flat-panel displays.

<p>As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10⁷~8.3×10⁸, and a sub-threshold slope of 0.44V/dec. Sentaurus TCAD simulations is the tool  which offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.</p>

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