A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

doi:10.7567/jjap.57.04fg04

Cited by 4 publications

(2 citation statements)

References 56 publications

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“…The observed frequency dispersion in the accumulation region lower than −1 V is usually attributed to the high series resistance of p-GaN rather than the interface state [17]. By neglecting the non-ideal effect arises from the difference between the work functions of metal and semiconductor due to variation in the doping level of semiconductor mat erial and oxide trapped charge, the fixed charge density The interface state density (D it ) distribution is evaluated using the Terman method by comparing the experimental C-V curves to the simulated ideal ones at high frequency [18].…”

Section: Resultsmentioning

confidence: 99%

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

Ren

Liao

Sumiya

et al. 2018

J. Phys. D: Appl. Phys.

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We report on a high-quality p-GaN metal-insulator-semiconductor (MIS) capacitors with sharp interface morphology and the lowest interface trap density by using SiNx as the gate dielectric layer. Transmission electron microscopy and x-ray photoelectron spectroscopy (XPS) analysis revealed a high-quality interface morphology with the effective removal of carbon and oxygen impurities. Better than the interface properties of Al2O3, SiO2, and CaF2/p-GaN metal-oxide-semiconductor (MOS) or MIS capacitors, the capacitance-voltage measurements of SiNx/p-GaN showed negligible electrical hysteresis after a two-step surface pre-treatment, leading to the lowest trapped charge density of 5 × 1010 cm−2. The interface state density distribution was also reduced to be ~1–2 × 1012 cm−2 · eV−1 at Et–Ev = 0.2–0.45 eV and 3–5 × 1012 cm−2 · eV−1 near the valance-band edge after the treatments. The achievement of the high-quality MIS interface was attributed to the suppression of the Mg-Ga-O interfacial disordered layer by the effective surface treatments and oxygen-free deposition process, which was usually observed at Al2O3/p-GaN MOS interface.

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Section: Resultsmentioning

confidence: 99%

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

Ren

Liao

Sumiya

et al. 2018

J. Phys. D: Appl. Phys.

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“…The authors have already reported a modeling method based on device simulation. 32,33) However, device simulation is a general-purpose physical modeling tool, and heavy resources are required for calculating time and input data creation.…”

Section: Introductionmentioning

confidence: 99%

A time-dependent Verilog-A compact model for MOS capacitors with interface traps

Fukuda

Asai

Hattori

et al. 2019

Jpn. J. Appl. Phys.

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A modeling method to analyze transient behaviors of MOS capacitors including interface traps by circuit simulation is proposed. Through applications to GaN MOS capacitors, plateau, frequency dispersion, and hysteresis are obtained as typical trap influences on C–V characteristics. Examples of more complicated cases are demonstrated, including the influence of the energy distribution of the trap, cases with multiple peaks in the trap energy distribution, cases where resistors are connected in series as a circuit. Through these examples, it is expected that this modeling method using circuit simulation will be useful for modeling experimental results of trap-affected MOS capacitors.

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A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Nishiguchi

Nakata

Hashizume

2022

Journal of Applied Physics

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The capacitance–voltage ([Formula: see text]–[Formula: see text]) and conductance–voltage ([Formula: see text]–[Formula: see text]) characteristics of GaN metal–insulator–semiconductor (MIS) structures have a frequency dependence due to the capture and emission of electrons by the high density of the interface states. However, the details of how an interface state affects [Formula: see text]–[Formula: see text] and [Formula: see text]–[Formula: see text] characteristics is still not well understood. In this paper, we report a numerical modeling method that can simulate the frequency dependent [Formula: see text]–[Formula: see text] and [Formula: see text]–[Formula: see text] characteristics of GaN MIS structures.

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A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

Cited by 4 publications

References 56 publications

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

A time-dependent Verilog-A compact model for MOS capacitors with interface traps

A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

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A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

Cited by 4 publications

References 56 publications

High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states

High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states

A time-dependent Verilog-A compact model for MOS capacitors with interface traps

A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Contact Info

Product

Resources

About

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states