A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Nishiguchi, Kenya; Nakata, Kohei; Hashizume, Tamotsu

doi:10.1063/5.0112198

Journal of Applied Physics

2022

DOI: 10.1063/5.0112198

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A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Kenya Nishiguchi

Kohei Nakata

Tamotsu Hashizume

Abstract: The capacitance–voltage ([Formula: see text]–[Formula: see text]) and conductance–voltage ([Formula: see text]–[Formula: see text]) characteristics of GaN metal–insulator–semiconductor (MIS) structures have a frequency dependence due to the capture and emission of electrons by the high density of the interface states. However, the details of how an interface state affects [Formula: see text]–[Formula: see text] and [Formula: see text]–[Formula: see text] characteristics is still not well understood. In this pa… Show more

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Cited by 3 publications

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“…For further insights and quantitative assessment of D IT , the measured C-V profiles were then fitted with a one-dimensional Poisson-Schrodinger solver, [26][27][28][29][30] within the framework of the disorder-induced gap state model. 31,32) After numerous trials and rigorous numerical fitting procedures, we were able to reproduce the experimental C-V curves as can be seen from the good agreement of measured and calculated C-V profiles.…”

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confidence: 99%

Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs

Baratov,

Igarashi,

Ishiguro

et al. 2023

Jpn. J. Appl. Phys.

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We report on highly improved performance of Al2O3/AlGaN/GaN MIS-HEMTs using V/Al/Mo/Au metal stack as ohmic electrodes. Transfer length method (TLM) test structures using V/Al/Mo/Au metal stack annealed at temperature of 660 °C revealed highly linear current-voltage curves and smooth surface morphology. Compared with reference MIS-HEMTs using Ti/Al/Mo/Au annealed at standard RTA temperature of 880 °C, V-based devices exhibited less hysteresis of transfer curves and showed higher gate controllability of drain current, suggesting highly improved Al2O3/AlGaN interface. Measurements and analyses of capacitance-voltage characteristics of corresponding MIS-capacitors corroborated these findings. V-based ohmic contact could open new avenues towards enhanced GaN-based MIS-HEMTs performance.

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mentioning

confidence: 99%

Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs

Baratov,

Igarashi,

Ishiguro

et al. 2023

Jpn. J. Appl. Phys.

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Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer

Hatakeyama

Akazawa

2022

AIP Advances

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An interface state density ( D it) distribution near the conduction band edge ( E C) at the Al2O3/Mg-ion-implanted GaN interface was measured after ion implantation, annealing with an AlN protective cap, and cap layer removal. Mg ions were implanted into n-GaN with a Si concentration of 6 × 1017 cm−3 at a maximum Mg concentration of 2 × 1017 cm−3, resulting in the maintenance of the n-type conduction in GaN even after the activation of Mg dopants. Activation annealing was carried out at 1250 °C for 1 min using an AlN cap layer. The complete removal of the AlN cap layer was accomplished by wet etching, which was confirmed by x-ray photoelectron spectroscopy. The photoluminescence spectrum showed donor–acceptor-pair emission after annealing, indicating the activation of Mg acceptors. By applying the capacitance–voltage method to a completed metal–oxide–semiconductor diode, we derived a continuous distribution of relatively low D it below 5 × 1012 cm−2 eV−1, which increased monotonically toward E C in the range from E C − 0.15 to E C − 0.45 eV. Compared with the D it distribution of the as-implanted sample, the density of the discrete level at E C − 0.25 eV generated by divacancies markedly decreased upon 1250 °C annealing.

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Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures

Nishiguchi

Nakata

Nishiguchi

et al. 2023

Journal of Applied Physics

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GaN caps are commonly used to reduce sheet charge modulation induced by AlGaN/GaN surface potential. However, the details on how GaN caps affect C–V and G–V characteristics are still unclear. In this paper, we report a difference between these characteristics with and without GaN caps, and we discovered a mechanism in which GaN caps act as quantum wells to affect the charging and discharging of interface states. Finally, we developed a numerical model to simulate admittance characteristics of AlGaN/GaN MIS structures with a GaN cap in high accuracy.

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A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Cited by 3 publications

References 29 publications

Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs

Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs

Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer

Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures

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