2016
DOI: 10.5573/jsts.2016.16.5.687
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A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

Abstract: Abstract-A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

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Cited by 3 publications
(1 citation statement)
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“…This is because the extrinsic RLC components distributed in the transistor pads are usually underestimated in bulk CMOS technologies. This results in a non-negligible discrepancy between simulation and measurement in the circuit design at mm-wave frequencies [20]. Therefore, supplementary modeling is performed to the original transistor model to improve the model accuracy.…”
Section: Supplementary Empirical Transistor Modelingmentioning
confidence: 99%
“…This is because the extrinsic RLC components distributed in the transistor pads are usually underestimated in bulk CMOS technologies. This results in a non-negligible discrepancy between simulation and measurement in the circuit design at mm-wave frequencies [20]. Therefore, supplementary modeling is performed to the original transistor model to improve the model accuracy.…”
Section: Supplementary Empirical Transistor Modelingmentioning
confidence: 99%