A transformer-coupled power amplifier in 90-nm CMOS process for V-band applications

This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a 55 nm CMOS technology for V-band 5G wireless communication applications. An accurate magnetically-coupledresonator (MCR) analysis and evaluation method is proposed to capture the MCR characteristics and optimize PA gain and bandwidth. A low-lossmatching-resonator (LLMR) technology is developed to enhance power gain and efficiency. The PA achieves a peak gain of 21.1 dB at 67 GHz with a 3 dB bandwidth (BW −3) of 10 GHz. At 67 GHz, the measured saturated output power (P), the output 1dB compression point (OP 1) and the peak PAE are 13.9 dBm, 9.7 dBm and 11.8%, respectively.

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A transformer-coupled power amplifier in 90-nm CMOS process for V-band applications

Cited by 4 publications

References 10 publications

94 GHz eight-way power amplifier with high output power and power-added efficiency in 90 nm CMOS

94 GHz eight-way power amplifier with high output power and power-added efficiency in 90 nm CMOS

A 60-GHz Two-Way Transformer-Coupled Power Amplifier in 65-nm CMOS

A high gain V-band power amplifier for 5G applications

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