A D-Band Multiplier-Based OOK Transceiver With Supplementary Transistor Modeling in 65-nm Bulk CMOS Technology

Suh, Bohee; Lee, Hyun Kyu; Kim, Soo-Yeon; Jeon, Sanggeun

doi:10.1109/access.2018.2889165

Cited by 9 publications

(3 citation statements)

References 22 publications

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“…In [8], a similar approach was employed along with a gate-distributed line. A similar technique is implemented in [9] with a transmission line in between the cascaded switches.…”

Section: Introductionmentioning

confidence: 99%

A High-Speed V-Band Distributed OOK Modulator in 65 nm CMOS

Mehmood,

Seo

2024

Electronics

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This paper presents a high-speed V-band on-off keying (OOK) modulator in 65 nm CMOS based on distributed transmission lines architecture. The high-speed operation of the proposed OOK modulator is attained by distributing a single large switching transistor into smaller units. The effects of parasitic capacitances of each small switch are mitigated by series inductors, forming an artificial transmission line. The switch size and the number of stages are optimized for a reasonable balance between insertion loss and isolation. Small signal measurement of the OOK modulator reveals 3.8 dB insertion loss and 20.5 dB isolation at 60 GHz, with <5 dB insertion loss and >16 dB on-off ratio from 50 GHz to 70 GHz. Testing with a modulation setup shows the modulator is fully functional up to 5 Gbps at a 60 GHz carrier. Limitations of the test setup prevent modulation testing at >5 Gbps. The fabricated modulator does not consume any DC power and has an active footprint of 0.025 mm2.

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“…In [8], a similar approach was employed along with a gate-distributed line. A similar technique is implemented in [9] with a transmission line in between the cascaded switches.…”

Section: Introductionmentioning

confidence: 99%

A High-Speed V-Band Distributed OOK Modulator in 65 nm CMOS

Mehmood,

Seo

2024

Electronics

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“…Specifically, the relatively large−sized SIR structures afford low IL [22,23]. BPFs with adjustable bandwidth and high performance using the bridged T−coils have also been studied; however, such filters use a metal-insulator-metal (MIM) capacitor structure, which requires additional process masking and fabrication, thereby increasing manufacturing costs [24,25].…”

Section: Introductionmentioning

confidence: 99%

Compact Size of an Interdigital Band-Pass Filter with Flexible Bandwidth and Low Insertion-Loss Using a Folded Spiral and Stepped Impedance Resonant Structure

Yoon

Kim

2021

Electronics

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A conventional interdigital bandpass filter (BPF) is characterized by coupled and tapped lines and affords low insertion loss (IL) and easy fractional bandwidth (FBW) adjustment. However, the maximum FBW of the filter is limited to 30%, beyond that, its gap size increases, thereby rendering filter fabrication impractical on a standard printed circuit board. In addition, the filter size cannot be changed because it dictates the operational frequency of the filter. Hence, in this study, we propose a compact interdigital BPF based on a spiral and folded stepped impedance resonator (SIR), which affords low IL and excellent group delay. The spiral, folded structure facilitates drastic FBW adjustment: the center frequency and adjustable range of the FBW of the designed BPF are 800 MHz and 80 to 180%, respectively. Additionally, the proposed BPF can adjust the FBW by k-factor which can adjust from 80 to 180%. The insertion and return losses of the proposed filter are 0.043 dB and 17.1 dB, respectively, and the group delay is 0.098 ns. The total filter size is only 13.8 mm × 5.98 mm, which corresponds to a size reduction by factors of >2/8 relative to a conventional filter and 2.1 relative to the latest BPF design. The group delay difference between the BPF and other filters is 0.15 ns. In addition, the range of adjustable FBW for the filter is 1.36 times different than for other filters.

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“…Also, the isolation, which is defined as the difference of the output powers of ON and OFF states, is crucial for the OOK transceiver sensitivity. A switch‐based passive OOK modulator architecture has been proposed to achieve high isolation with good power efficiency [13, 14]. This modulator realises OOK modulation by changing the insertion loss at ON and OFF states by using a distributed structure of single‐pole–single‐throw switches, which support wideband performance.…”

Section: Introductionmentioning

confidence: 99%

11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier‐based stages in 65 nm bulk CMOS

Otsuki

Hara

Khanh

et al. 2020

IET Circuits, Devices & Systems

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This study presents a complementary metal-oxide-semiconductor (CMOS) 140 GHz on-off-keying (OOK) modulator with high isolation and low ON-state insertion loss based on a cascaded architecture of a switch-based and amplifier-based modulators. A prototype implemented in a 65 nm bulk CMOS process operates at 140 GHz carrier input and realises 24.6 dB isolation, whereas in ON-state it achieves 0.3 dB gain and −0.2 dBm OP1 dB with 8 mW power consumption. Up to 11 Gb/s modulation is verified with the spectrum and demodulated waveform measurements. The proposed OOK modulator occupies the core area of 250×380 μm 2 .

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A D-Band Multiplier-Based OOK Transceiver With Supplementary Transistor Modeling in 65-nm Bulk CMOS Technology

Cited by 9 publications

References 22 publications

A High-Speed V-Band Distributed OOK Modulator in 65 nm CMOS

A High-Speed V-Band Distributed OOK Modulator in 65 nm CMOS

Compact Size of an Interdigital Band-Pass Filter with Flexible Bandwidth and Low Insertion-Loss Using a Folded Spiral and Stepped Impedance Resonant Structure

11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier‐based stages in 65 nm bulk CMOS

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