A tin oxide field-effect transistor

Klasens, H. A.; Koelmans, H.

doi:10.1016/0038-1101(64)90057-7

Cited by 105 publications

(51 citation statements)

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“…Oxide TFTs have a long history that extends from the mid-1960s [34,35], but there was a long lull until the report of SnO 2 :Sb TFTs combined with a ferroelectric gate in 1996 [36], although some unpublished development work had been conducted. Th e oxide TFT fever started in 2003 with reports of several crystalline oxide TFTs using ZnO [37][38][39][40] and InGaZnO 4 [41] channels.…”

Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Few years later in 1964, the first TFT with a metal oxide semiconductor was demonstrated by Klasens and Koelmans. 46 The device was manufactured by photolithographic techniques and comprised aluminum (Al) electrodes, anodized aluminum oxide (Al 2 O 3 ) gate dielectric, evaporated n-type tin oxide (SnO 2 ) semiconductor, and source/drain contacts on a glass substrate. For the first time, the transparency of substrate, semiconductor, and gate dielectric allowed realizing a self-aligned (SA) lithographic lift-off process, where the source/drain contacts were defined by exposing the photoresist to ultraviolet (UV) light penetrating from the back of the substrate.…”

Section: A Historical Perspectivementioning

confidence: 99%

“…In this way, the opaque Al gate electrode could act as a shielding layer for the UV light. 46 Subsequently, TFTs with single crystal lithiumdoped zinc oxide (ZnO:Li) hydrotermically grown from solution, 47 as well as SnO 2 deposited from vapor phase reaction, were presented. 48 Nevertheless, none of these two devices outperformed the results shown by Klasens and Koelmans.…”

Section: A Historical Perspectivementioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

547

430

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“…One such transparent oxide semiconductor material is tin oxide (SnO 2 ), which has high optical transmittance in the visible range and low electrical resistance [2][3][4]. SnO 2 is an n-type semiconductor that forms as a result of an excess of electrons produced by ionization of oxygen vacancies, and interstitial tin atoms that are generated during the crystal growth process.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

Jang¹,

Yim²,

Cho³

et al. 2015

Journal of Sensor Science and Technology

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Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at 500 o C for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed SnO 2 thin films indicated a SnO 2 single phase. Thickness of the SnO 2 films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm SnO 2 thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness (3×10 -4 ohm/cm). From Hall measurements, the 50 nm thickness SnO 2 thin film had the highest mobility of the samples (8.6 cm 2 /(V·s)). In conclusion, optical and electronic properties of SnO 2 thin films could be controlled by adjusting the number of SILAR cycles.

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A tin oxide field-effect transistor

Cited by 105 publications

References 0 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Metal oxide semiconductor thin-film transistors for flexible electronics

Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method

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A tin oxide field-effect transistor

Cited by 105 publications

References 0 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Metal oxide semiconductor thin-film transistors for flexible electronics

Optical and Electronic Properties of SnO2Thin Films Fabricated Using the SILAR Method

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Optical and Electronic Properties of SnO₂Thin Films Fabricated Using the SILAR Method