A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs

Odanaka, S.; Yamashita, K.; Koike, N.; Tatsuuma, K.

doi:10.1109/icmts.2002.1193178

Cited by 2 publications

References 23 publications

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A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

Matsuda

Muramatsu

Iwata

et al.

Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)

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A test structure and method for two-dimensional analysis of fabrication process and reliability of MOSFET using a photoemission microscope are presented. Arrays of 20x10(=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array.

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A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

Matsuda

Muramatsu

Iwata

et al.

Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)

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A test structure for spectrum analysis of hot-carrier-induced photoemission from mosfets

Matsuda

Ohzone

Odanaka

et al. 2003

IEEE Trans. Semicond. Manufact.

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Hot-carrier-induced photoemission of subquarter-micron n-MOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp( ). The electron temperature calculated from photon emission spectrum takes minimum value at the channel length of 0.23 m. If is related to the device reliability, it suggests the possibility that the device structure optimized for a certain channel length may not be optimum for other channel length devices.

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A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs

Cited by 2 publications

References 23 publications

A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

A test structure for spectrum analysis of hot-carrier-induced photoemission from mosfets

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