A temperature dependent model for the saturation velocity in semiconductor materials

Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S.

doi:10.1016/s1369-8001(00)00015-9

Cited by 122 publications

(67 citation statements)

References 34 publications

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“…Considering that the built-in radial electric field is on the order of several 10 kV cm À 1 for heavily doped wires 28 , we assume a drift velocity of the photoexcited carriers as high as the saturation velocity in InP, which is 7 Â 10 6 cm s À 1 (ref. 31). With a wire radius of 15 nm, we expect a drift time of B200 fs, which agrees well with the observed 10-90 rise times of 140 fs and 230 fs of p-and n-segment, respectively.…”

Section: Experimental Conceptsupporting

confidence: 87%

Femtosecond electrons probing currents and atomic structure in nanomaterials

Müller¹,

Paarmann²,

Ernstorfer³

2014

Nat Commun

120

158

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The investigation of ultrafast electronic and structural dynamics in low-dimensional systems such as nanowires and two-dimensional materials requires femtosecond probes providing high spatial resolution and strong interaction with small volume samples. Low-energy electrons exhibit large scattering cross-sections and high sensitivity to electric fields, but their pronounced dispersion during propagation in vacuum so far prevented their use as femtosecond probe pulses in time-resolved experiments. Here, employing a laser-triggered point-like source of either divergent or collimated electron wave packets, we developed a hybrid approach for femtosecond point projection microscopy and femtosecond low-energy electron diffraction. We investigate ultrafast electric currents in nanowires with sub-100 femtosecond temporal and few 10 nm spatial resolutions, and demonstrate the potential of our approach for studying structural dynamics in crystalline single-layer materials.

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Section: Experimental Conceptsupporting

confidence: 87%

Femtosecond electrons probing currents and atomic structure in nanomaterials

Müller¹,

Paarmann²,

Ernstorfer³

2014

Nat Commun

120

158

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“…We have used electron mobility (μ) in the range of 1000 cm 2 V -1 s -1 and saturation drift velocity of 7.2×10 6 cm -1 at T = 300K which are in accordance with some measured values reported in litera− ture [5,[25][26][27]. Zero bias escape time of electrons varies from 10 -14 s to 10 -12 s and it is different in the case of B−C and B−B transition in accordance to some reported literature [20][21].…”

Section: Resultssupporting

confidence: 64%

Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications

Billaha

Das

2016

Opto-Electronics Review

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“…It is well known that with increasing temperature, the electric field will increase in the avalanche region of operation [4]. The drift velocity v is a very weak function of electric field at high field strengths, but the carrier saturation velocity has been shown to have a negative temperature coefficient [10]. Thus the carrier concentration n will increase with increasing temperature to counter the effect of reduced carrier velocity v. The device simulation results of Fig.…”

Section: Electric Field and Electron Concentrationmentioning

confidence: 94%

Temperature characteristics of hot electron electroluminescence in silicon

Plessis¹,

Wen²,

Bellotti³

2015

Opt. Express

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Emission spectra of avalanching n + p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results. 5848-5856 (1992). 13. K. Xu and G. P. Li, "A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal-oxide-semiconductor technology," J. Appl. Phys. 113, 103106 (2013). 14. S. Tam, F-C. Hsu, C. Hu, R. S. Muller and P. K. Ko, "Hot-electron currents in very short channel MOSFET's," IEEE Electron Device Lett. 4(7), 249-251 (1983). 15. J. Yuan and D. Haneman, "Visible electroluminescence from native SiO2 on n-type Si substrates," J. Appl.Phys. 86(4), 2358-2360 (1999). 16. L. Heikkilä, T. Kuusela and H.-P. Hedman, "Electroluminescence in Si/SiO2 layer structures," J. Appl. Phys. 89(4), 2179-2184 (2001). 17. A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova and S. Pizzini, "Efficient silicon light-emitting diode with temperature-stable spectral characteristics," Semiconductors 37(6), 730-735 (2003).

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A temperature dependent model for the saturation velocity in semiconductor materials

Cited by 122 publications

References 34 publications

Femtosecond electrons probing currents and atomic structure in nanomaterials

Femtosecond electrons probing currents and atomic structure in nanomaterials

Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications

Temperature characteristics of hot electron electroluminescence in silicon

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